Capless annealing of ion-implanted GaAs
A method is reported for capless annealing of ion-implanted GaAs which gives electrical activation of Se-implanted wafers nearly identical to that obtained with sputtered silicon nitride caps. State-of-the-art performance has been realized from Schottky-gate FET’s fabricated from this material.
Gespeichert in:
| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1976-07, Vol.29 (2), p.94-95 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 95 |
|---|---|
| container_issue | 2 |
| container_start_page | 94 |
| container_title | Appl. Phys. Lett.; (United States) |
| container_volume | 29 |
| creator | Immorlica, A. A. Eisen, F. H. |
| description | A method is reported for capless annealing of ion-implanted GaAs which gives electrical activation of Se-implanted wafers nearly identical to that obtained with sputtered silicon nitride caps. State-of-the-art performance has been realized from Schottky-gate FET’s fabricated from this material. |
| doi_str_mv | 10.1063/1.88981 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_proquest_miscellaneous_22575576</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>22574569</sourcerecordid><originalsourceid>FETCH-LOGICAL-c378t-cee3cb127fabb68bdc0b491895770f33a0be21b8a2b616c8690f8ee4087407e43</originalsourceid><addsrcrecordid>eNqN0M1KxDAUBeAgCtZRfIXiwll1vLdpfrocio7CgBtdhyRzq5FOU5vOwre3Oj6Aq8uFj8PhMHaNsEKQ_A5XWtcaT1iGoFTBEfUpywCAF7IWeM4uUvqYX1FynrFlY4eOUspt35PtQv-WxzYPsS_CfuhsP9Eu39h1umRnre0SXf3dBXt9uH9pHovt8-apWW8Lz5WeCk_EvcNStdY5qd3Og6tq1LVQClrOLTgq0WlbOonSa1lDq4kq0KoCRRVfsJtjbkxTMMmHify7j3M5PxmFWgOqGd0e0TDGzwOlyexD8tTNfSkekilLoYRQ8l-wErKe4fII_RhTGqk1wxj2dvwyCOZnVoPmd1b-DQU6Zuo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>22574569</pqid></control><display><type>article</type><title>Capless annealing of ion-implanted GaAs</title><source>AIP Digital Archive</source><creator>Immorlica, A. A. ; Eisen, F. H.</creator><creatorcontrib>Immorlica, A. A. ; Eisen, F. H. ; Science Center, Rockwell International, Thousand Oaks, California 91360</creatorcontrib><description>A method is reported for capless annealing of ion-implanted GaAs which gives electrical activation of Se-implanted wafers nearly identical to that obtained with sputtered silicon nitride caps. State-of-the-art performance has been realized from Schottky-gate FET’s fabricated from this material.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.88981</identifier><language>eng</language><publisher>United States</publisher><subject>360605 - Materials- Radiation Effects ; ANNEALING ; ARSENIC COMPOUNDS ; ARSENIDES ; ATOMIC IONS ; CHARGED PARTICLES ; FIELD EFFECT TRANSISTORS ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; HEAT TREATMENTS ; ION IMPLANTATION ; IONS ; LUMINESCENCE ; MATERIALS SCIENCE ; PHOTOLUMINESCENCE ; PHYSICAL RADIATION EFFECTS ; PNICTIDES ; RADIATION EFFECTS ; SELENIUM IONS ; SEMICONDUCTOR DEVICES ; TRANSISTORS</subject><ispartof>Appl. Phys. Lett.; (United States), 1976-07, Vol.29 (2), p.94-95</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-cee3cb127fabb68bdc0b491895770f33a0be21b8a2b616c8690f8ee4087407e43</citedby><cites>FETCH-LOGICAL-c378t-cee3cb127fabb68bdc0b491895770f33a0be21b8a2b616c8690f8ee4087407e43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/7188017$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Immorlica, A. A.</creatorcontrib><creatorcontrib>Eisen, F. H.</creatorcontrib><creatorcontrib>Science Center, Rockwell International, Thousand Oaks, California 91360</creatorcontrib><title>Capless annealing of ion-implanted GaAs</title><title>Appl. Phys. Lett.; (United States)</title><description>A method is reported for capless annealing of ion-implanted GaAs which gives electrical activation of Se-implanted wafers nearly identical to that obtained with sputtered silicon nitride caps. State-of-the-art performance has been realized from Schottky-gate FET’s fabricated from this material.</description><subject>360605 - Materials- Radiation Effects</subject><subject>ANNEALING</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>ATOMIC IONS</subject><subject>CHARGED PARTICLES</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>HEAT TREATMENTS</subject><subject>ION IMPLANTATION</subject><subject>IONS</subject><subject>LUMINESCENCE</subject><subject>MATERIALS SCIENCE</subject><subject>PHOTOLUMINESCENCE</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>PNICTIDES</subject><subject>RADIATION EFFECTS</subject><subject>SELENIUM IONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSISTORS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1976</creationdate><recordtype>article</recordtype><recordid>eNqN0M1KxDAUBeAgCtZRfIXiwll1vLdpfrocio7CgBtdhyRzq5FOU5vOwre3Oj6Aq8uFj8PhMHaNsEKQ_A5XWtcaT1iGoFTBEfUpywCAF7IWeM4uUvqYX1FynrFlY4eOUspt35PtQv-WxzYPsS_CfuhsP9Eu39h1umRnre0SXf3dBXt9uH9pHovt8-apWW8Lz5WeCk_EvcNStdY5qd3Og6tq1LVQClrOLTgq0WlbOonSa1lDq4kq0KoCRRVfsJtjbkxTMMmHify7j3M5PxmFWgOqGd0e0TDGzwOlyexD8tTNfSkekilLoYRQ8l-wErKe4fII_RhTGqk1wxj2dvwyCOZnVoPmd1b-DQU6Zuo</recordid><startdate>19760715</startdate><enddate>19760715</enddate><creator>Immorlica, A. A.</creator><creator>Eisen, F. H.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19760715</creationdate><title>Capless annealing of ion-implanted GaAs</title><author>Immorlica, A. A. ; Eisen, F. H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-cee3cb127fabb68bdc0b491895770f33a0be21b8a2b616c8690f8ee4087407e43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1976</creationdate><topic>360605 - Materials- Radiation Effects</topic><topic>ANNEALING</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>ATOMIC IONS</topic><topic>CHARGED PARTICLES</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>HEAT TREATMENTS</topic><topic>ION IMPLANTATION</topic><topic>IONS</topic><topic>LUMINESCENCE</topic><topic>MATERIALS SCIENCE</topic><topic>PHOTOLUMINESCENCE</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>PNICTIDES</topic><topic>RADIATION EFFECTS</topic><topic>SELENIUM IONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSISTORS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Immorlica, A. A.</creatorcontrib><creatorcontrib>Eisen, F. H.</creatorcontrib><creatorcontrib>Science Center, Rockwell International, Thousand Oaks, California 91360</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Immorlica, A. A.</au><au>Eisen, F. H.</au><aucorp>Science Center, Rockwell International, Thousand Oaks, California 91360</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Capless annealing of ion-implanted GaAs</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1976-07-15</date><risdate>1976</risdate><volume>29</volume><issue>2</issue><spage>94</spage><epage>95</epage><pages>94-95</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>A method is reported for capless annealing of ion-implanted GaAs which gives electrical activation of Se-implanted wafers nearly identical to that obtained with sputtered silicon nitride caps. State-of-the-art performance has been realized from Schottky-gate FET’s fabricated from this material.</abstract><cop>United States</cop><doi>10.1063/1.88981</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1976-07, Vol.29 (2), p.94-95 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_22575576 |
| source | AIP Digital Archive |
| subjects | 360605 - Materials- Radiation Effects ANNEALING ARSENIC COMPOUNDS ARSENIDES ATOMIC IONS CHARGED PARTICLES FIELD EFFECT TRANSISTORS GALLIUM ARSENIDES GALLIUM COMPOUNDS HEAT TREATMENTS ION IMPLANTATION IONS LUMINESCENCE MATERIALS SCIENCE PHOTOLUMINESCENCE PHYSICAL RADIATION EFFECTS PNICTIDES RADIATION EFFECTS SELENIUM IONS SEMICONDUCTOR DEVICES TRANSISTORS |
| title | Capless annealing of ion-implanted GaAs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T15%3A29%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Capless%20annealing%20of%20ion-implanted%20GaAs&rft.jtitle=Appl.%20Phys.%20Lett.;%20(United%20States)&rft.au=Immorlica,%20A.%20A.&rft.aucorp=Science%20Center,%20Rockwell%20International,%20Thousand%20Oaks,%20California%2091360&rft.date=1976-07-15&rft.volume=29&rft.issue=2&rft.spage=94&rft.epage=95&rft.pages=94-95&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.88981&rft_dat=%3Cproquest_osti_%3E22574569%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=22574569&rft_id=info:pmid/&rfr_iscdi=true |