Self-focusing of near-infrared laser beams in GaAs
Self-focusing of Q-switched Nd-YAG laser radiation in single-crystal GaAs has been studied. Near- and far-field intensity distributions measured after the light has passed through 1 cm of GaAs are given for various incident pulse energies. The self-focusing correlates qualitatively with linear absor...
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Veröffentlicht in: | Journal of applied physics 1975-05, Vol.46 (5), p.2177-2180 |
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container_title | Journal of applied physics |
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creator | Miller, Robert C. Nordland, W. A. |
description | Self-focusing of Q-switched Nd-YAG laser radiation in single-crystal GaAs has been studied. Near- and far-field intensity distributions measured after the light has passed through 1 cm of GaAs are given for various incident pulse energies. The self-focusing correlates qualitatively with linear absorption but is found to be most pronounced in p-type material. This self-focusing is believed to be of thermal origin, resulting from absorption coupled with a refractive index that increases with temperature. |
doi_str_mv | 10.1063/1.321862 |
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A.</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Miller, Robert C.</au><au>Nordland, W. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Self-focusing of near-infrared laser beams in GaAs</atitle><jtitle>Journal of applied physics</jtitle><date>1975-05-01</date><risdate>1975</risdate><volume>46</volume><issue>5</issue><spage>2177</spage><epage>2180</epage><pages>2177-2180</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Self-focusing of Q-switched Nd-YAG laser radiation in single-crystal GaAs has been studied. Near- and far-field intensity distributions measured after the light has passed through 1 cm of GaAs are given for various incident pulse energies. The self-focusing correlates qualitatively with linear absorption but is found to be most pronounced in p-type material. This self-focusing is believed to be of thermal origin, resulting from absorption coupled with a refractive index that increases with temperature.</abstract><doi>10.1063/1.321862</doi><tpages>4</tpages></addata></record> |
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title | Self-focusing of near-infrared laser beams in GaAs |
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