An investigation of RF sputter etched silicon surfaces using helium ion backscatter
The effect of RF sputter etching on the (111) surface of silicon was studied by observing backscatter spectra from a 2 MeV, 4He + beam oriented along the silicon 〈111〉 channel. Silicon samples were RF sputter etched in a 5 × 10 −3 torr, argon discharge at electrode bias potentials ranging from 0.5 t...
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| Veröffentlicht in: | Solid-State Electron., v. 18, no. 5, pp. 431-435 v. 18, no. 5, pp. 431-435, 1975-05, Vol.18 (5), p.431-435 |
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| container_end_page | 435 |
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| container_issue | 5 |
| container_start_page | 431 |
| container_title | Solid-State Electron., v. 18, no. 5, pp. 431-435 |
| container_volume | 18 |
| creator | Sachse, Glen W. Miller, William E. Gross, Chris |
| description | The effect of RF sputter etching on the (111) surface of silicon was studied by observing backscatter spectra from a 2 MeV,
4He
+ beam oriented along the silicon 〈111〉 channel. Silicon samples were RF sputter etched in a 5 × 10
−3 torr, argon discharge at electrode bias potentials ranging from 0.5 to 2.5 kV. The samples were sputter etched for a time sufficient for the lattice damage to reach saturation. Analysis of these samples revealed that the thickness of this damage layer and the concentration of trapped argon increased with electrode bias potential. An annealing study of these damaged surfaces was carried out to 900°C. |
| doi_str_mv | 10.1016/0038-1101(75)90045-3 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_proquest_miscellaneous_22410190</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>0038110175900453</els_id><sourcerecordid>22410190</sourcerecordid><originalsourceid>FETCH-LOGICAL-c428t-8bf7b979add2a3a8a2e1410144cc4045d087a34101734e4212130ced07f849423</originalsourceid><addsrcrecordid>eNp9kEtLAzEUhYMoWKv_wEVwIboYvXlMZ2YjSLEqFAQf65Bm7rTR6UxNMgX_vYkVl64Scs-5-c4h5JTBFQM2uQYQZcbi9aLILysAmWdij4xYWVQZl5Dvk9Gf5JAcef8OAHzCYERebjtquy36YJc62L6jfUOfZ9RvhhDQUQxmhTX1trUmDv3gGm3Q08HbbklX2NphTZNtoc2HNzqZjslBo1uPJ7_nmLzN7l6nD9n86f5xejvPjORlyMpFUyyqotJ1zbXQpebIZCSU0hgZM9RQFlqkl0JIlJxxJsBgDUVTykpyMSZnu719pFfe2IBmFSk7NEHFOUieR9H5TrRx_ecQc6q19QbbVnfYD15xnn6oIArlTmhc773DRm2cXWv3pRioVLNKHarUoSpy9VOzEtF2s7NhTLq16BIIdpHTusRR9_b_Bd8qvoKA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>22410190</pqid></control><display><type>article</type><title>An investigation of RF sputter etched silicon surfaces using helium ion backscatter</title><source>Elsevier ScienceDirect Journals</source><creator>Sachse, Glen W. ; Miller, William E. ; Gross, Chris</creator><creatorcontrib>Sachse, Glen W. ; Miller, William E. ; Gross, Chris ; National Aeronautics and Space Administration, Langley Station, VA</creatorcontrib><description>The effect of RF sputter etching on the (111) surface of silicon was studied by observing backscatter spectra from a 2 MeV,
4He
+ beam oriented along the silicon 〈111〉 channel. Silicon samples were RF sputter etched in a 5 × 10
−3 torr, argon discharge at electrode bias potentials ranging from 0.5 to 2.5 kV. The samples were sputter etched for a time sufficient for the lattice damage to reach saturation. Analysis of these samples revealed that the thickness of this damage layer and the concentration of trapped argon increased with electrode bias potential. An annealing study of these damaged surfaces was carried out to 900°C.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/0038-1101(75)90045-3</identifier><language>eng</language><publisher>United Kingdom: Elsevier Ltd</publisher><subject>ANNEALING ; ARGON ; BACKSCATTERING ; CATIONS ; CRYSTAL DEFECTS ; ELECTRIC DISCHARGES ; ELECTRIC POTENTIAL ; ENERGY SPECTRA ; ETCHING ; HELIUM 4 BEAMS ; HELIUM IONS-- COLLISIONS ; MEDIUM VACUUM ; MICROSTRUCTURE ; N60100 --Physics (Atomic & Molecular)--Atomic, Electron, Ion & Molecular Beams & Reactions ; RF SYSTEMS ; SILICON-- SPUTTERING ; SURFACES ; THICKNESS ; TIME DEPENDENCE ; VERY HIGH TEMPERATURE</subject><ispartof>Solid-State Electron., v. 18, no. 5, pp. 431-435, 1975-05, Vol.18 (5), p.431-435</ispartof><rights>1975</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-8bf7b979add2a3a8a2e1410144cc4045d087a34101734e4212130ced07f849423</citedby><cites>FETCH-LOGICAL-c428t-8bf7b979add2a3a8a2e1410144cc4045d087a34101734e4212130ced07f849423</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/0038110175900453$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,881,3537,27903,27904,65309</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/4230425$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sachse, Glen W.</creatorcontrib><creatorcontrib>Miller, William E.</creatorcontrib><creatorcontrib>Gross, Chris</creatorcontrib><creatorcontrib>National Aeronautics and Space Administration, Langley Station, VA</creatorcontrib><title>An investigation of RF sputter etched silicon surfaces using helium ion backscatter</title><title>Solid-State Electron., v. 18, no. 5, pp. 431-435</title><description>The effect of RF sputter etching on the (111) surface of silicon was studied by observing backscatter spectra from a 2 MeV,
4He
+ beam oriented along the silicon 〈111〉 channel. Silicon samples were RF sputter etched in a 5 × 10
−3 torr, argon discharge at electrode bias potentials ranging from 0.5 to 2.5 kV. The samples were sputter etched for a time sufficient for the lattice damage to reach saturation. Analysis of these samples revealed that the thickness of this damage layer and the concentration of trapped argon increased with electrode bias potential. An annealing study of these damaged surfaces was carried out to 900°C.</description><subject>ANNEALING</subject><subject>ARGON</subject><subject>BACKSCATTERING</subject><subject>CATIONS</subject><subject>CRYSTAL DEFECTS</subject><subject>ELECTRIC DISCHARGES</subject><subject>ELECTRIC POTENTIAL</subject><subject>ENERGY SPECTRA</subject><subject>ETCHING</subject><subject>HELIUM 4 BEAMS</subject><subject>HELIUM IONS-- COLLISIONS</subject><subject>MEDIUM VACUUM</subject><subject>MICROSTRUCTURE</subject><subject>N60100 --Physics (Atomic & Molecular)--Atomic, Electron, Ion & Molecular Beams & Reactions</subject><subject>RF SYSTEMS</subject><subject>SILICON-- SPUTTERING</subject><subject>SURFACES</subject><subject>THICKNESS</subject><subject>TIME DEPENDENCE</subject><subject>VERY HIGH TEMPERATURE</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1975</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEUhYMoWKv_wEVwIboYvXlMZ2YjSLEqFAQf65Bm7rTR6UxNMgX_vYkVl64Scs-5-c4h5JTBFQM2uQYQZcbi9aLILysAmWdij4xYWVQZl5Dvk9Gf5JAcef8OAHzCYERebjtquy36YJc62L6jfUOfZ9RvhhDQUQxmhTX1trUmDv3gGm3Q08HbbklX2NphTZNtoc2HNzqZjslBo1uPJ7_nmLzN7l6nD9n86f5xejvPjORlyMpFUyyqotJ1zbXQpebIZCSU0hgZM9RQFlqkl0JIlJxxJsBgDUVTykpyMSZnu719pFfe2IBmFSk7NEHFOUieR9H5TrRx_ecQc6q19QbbVnfYD15xnn6oIArlTmhc773DRm2cXWv3pRioVLNKHarUoSpy9VOzEtF2s7NhTLq16BIIdpHTusRR9_b_Bd8qvoKA</recordid><startdate>19750501</startdate><enddate>19750501</enddate><creator>Sachse, Glen W.</creator><creator>Miller, William E.</creator><creator>Gross, Chris</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19750501</creationdate><title>An investigation of RF sputter etched silicon surfaces using helium ion backscatter</title><author>Sachse, Glen W. ; Miller, William E. ; Gross, Chris</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-8bf7b979add2a3a8a2e1410144cc4045d087a34101734e4212130ced07f849423</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1975</creationdate><topic>ANNEALING</topic><topic>ARGON</topic><topic>BACKSCATTERING</topic><topic>CATIONS</topic><topic>CRYSTAL DEFECTS</topic><topic>ELECTRIC DISCHARGES</topic><topic>ELECTRIC POTENTIAL</topic><topic>ENERGY SPECTRA</topic><topic>ETCHING</topic><topic>HELIUM 4 BEAMS</topic><topic>HELIUM IONS-- COLLISIONS</topic><topic>MEDIUM VACUUM</topic><topic>MICROSTRUCTURE</topic><topic>N60100 --Physics (Atomic & Molecular)--Atomic, Electron, Ion & Molecular Beams & Reactions</topic><topic>RF SYSTEMS</topic><topic>SILICON-- SPUTTERING</topic><topic>SURFACES</topic><topic>THICKNESS</topic><topic>TIME DEPENDENCE</topic><topic>VERY HIGH TEMPERATURE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sachse, Glen W.</creatorcontrib><creatorcontrib>Miller, William E.</creatorcontrib><creatorcontrib>Gross, Chris</creatorcontrib><creatorcontrib>National Aeronautics and Space Administration, Langley Station, VA</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Solid-State Electron., v. 18, no. 5, pp. 431-435</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sachse, Glen W.</au><au>Miller, William E.</au><au>Gross, Chris</au><aucorp>National Aeronautics and Space Administration, Langley Station, VA</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An investigation of RF sputter etched silicon surfaces using helium ion backscatter</atitle><jtitle>Solid-State Electron., v. 18, no. 5, pp. 431-435</jtitle><date>1975-05-01</date><risdate>1975</risdate><volume>18</volume><issue>5</issue><spage>431</spage><epage>435</epage><pages>431-435</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>The effect of RF sputter etching on the (111) surface of silicon was studied by observing backscatter spectra from a 2 MeV,
4He
+ beam oriented along the silicon 〈111〉 channel. Silicon samples were RF sputter etched in a 5 × 10
−3 torr, argon discharge at electrode bias potentials ranging from 0.5 to 2.5 kV. The samples were sputter etched for a time sufficient for the lattice damage to reach saturation. Analysis of these samples revealed that the thickness of this damage layer and the concentration of trapped argon increased with electrode bias potential. An annealing study of these damaged surfaces was carried out to 900°C.</abstract><cop>United Kingdom</cop><pub>Elsevier Ltd</pub><doi>10.1016/0038-1101(75)90045-3</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0038-1101 |
| ispartof | Solid-State Electron., v. 18, no. 5, pp. 431-435, 1975-05, Vol.18 (5), p.431-435 |
| issn | 0038-1101 1879-2405 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_22410190 |
| source | Elsevier ScienceDirect Journals |
| subjects | ANNEALING ARGON BACKSCATTERING CATIONS CRYSTAL DEFECTS ELECTRIC DISCHARGES ELECTRIC POTENTIAL ENERGY SPECTRA ETCHING HELIUM 4 BEAMS HELIUM IONS-- COLLISIONS MEDIUM VACUUM MICROSTRUCTURE N60100 --Physics (Atomic & Molecular)--Atomic, Electron, Ion & Molecular Beams & Reactions RF SYSTEMS SILICON-- SPUTTERING SURFACES THICKNESS TIME DEPENDENCE VERY HIGH TEMPERATURE |
| title | An investigation of RF sputter etched silicon surfaces using helium ion backscatter |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T16%3A32%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=An%20investigation%20of%20RF%20sputter%20etched%20silicon%20surfaces%20using%20helium%20ion%20backscatter&rft.jtitle=Solid-State%20Electron.,%20v.%2018,%20no.%205,%20pp.%20431-435&rft.au=Sachse,%20Glen%20W.&rft.aucorp=National%20Aeronautics%20and%20Space%20Administration,%20Langley%20Station,%20VA&rft.date=1975-05-01&rft.volume=18&rft.issue=5&rft.spage=431&rft.epage=435&rft.pages=431-435&rft.issn=0038-1101&rft.eissn=1879-2405&rft_id=info:doi/10.1016/0038-1101(75)90045-3&rft_dat=%3Cproquest_osti_%3E22410190%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=22410190&rft_id=info:pmid/&rft_els_id=0038110175900453&rfr_iscdi=true |