In Situ Growth of Leakage-Free Direct-Bridging GaN Nanowires: Application to Gas Sensors for Long-Term Stability, Low Power Consumption, and Sub-ppb Detection Limit

Direct-bridge growth of aligned GaN nanowires (NWs) over the trench of GaN-coated sapphire substrate was realized in which the issues of parasitic deposition and resultant bypass current were resolved by combining the novel shadowing effect of the deep trench with the surface-passivation effect of t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Nano letters 2019-06, Vol.19 (6), p.3448-3456
Hauptverfasser:	Zhao, Danna, Huang, Hui, Chen, Shunji, Li, Zhirui, Li, Shida, Wang, Mengyuan, Zhu, Huichao, Chen, Xiaoming
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!