Characterization of lead zirconate titanate thin films deposited at low temperature by reactive facing target sputtering

Lead zirconate titanate thin films have been deposited on platinized silicon substrate at low temperature by reactive facing target sputtering. The effects of substrate temperature, total gas pressure, sputtering ambience, input power and target composition on the phase composition of PZT thin film...

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Veröffentlicht in:	Thin solid films 2000-10, Vol.375 (1), p.267-270
Hauptverfasser:	Li, Xin-Shan, Tanaka, Tsunehisa, Suzuki, Yoshihiko
Format:	Artikel
Sprache:	eng
Schlagworte:	Composition and phase identification Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Ferroelectric property Lead zirconate titanate thin film Materials science Methods of deposition of films and coatings film growth and epitaxy Niobates, titanates, tantalates, pzt ceramics, etc Orientation Physics Reactive facing target sputtering Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Zusammenfassung:	Lead zirconate titanate thin films have been deposited on platinized silicon substrate at low temperature by reactive facing target sputtering. The effects of substrate temperature, total gas pressure, sputtering ambience, input power and target composition on the phase composition of PZT thin film were investigated. By controlling the sputtering conditions, highly (111) oriented perovskite PZT thin films can be obtained, and the samples show ferroelectric properties.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/S0040-6090(00)01220-7