High-temperature GaAs single heterojunction laser diodes

GaAs single heterojunction laser diodes were prepared by epitaxially growing all the layers of the structure. The doping in the n -type confining layer and the p -type active layer were varied as was the thickness of the active layer. The effect of these device parameters on the temperature variatio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	J. Appl. Phys.; (United States) 1974-10, Vol.45 (10), p.4520-4527
Hauptverfasser:	Minden, H T, Premo, R
Format:	Artikel
Sprache:	eng
Schlagworte:	420300 - Engineering- Lasers- (-1989) ARSENIC COMPOUNDS ARSENIDES CRYSTAL GROWTH ENGINEERING EPITAXY FABRICATION GALLIUM ARSENIDES GALLIUM COMPOUNDS LASERS PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!