High-temperature GaAs single heterojunction laser diodes
GaAs single heterojunction laser diodes were prepared by epitaxially growing all the layers of the structure. The doping in the n -type confining layer and the p -type active layer were varied as was the thickness of the active layer. The effect of these device parameters on the temperature variatio...
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| Veröffentlicht in: | J. Appl. Phys.; (United States) 1974-10, Vol.45 (10), p.4520-4527 |
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| container_issue | 10 |
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| container_title | J. Appl. Phys.; (United States) |
| container_volume | 45 |
| creator | Minden, H T Premo, R |
| description | GaAs single heterojunction laser diodes were prepared by epitaxially growing all the layers of the structure. The doping in the n -type confining layer and the p -type active layer were varied as was the thickness of the active layer. The effect of these device parameters on the temperature variation of the threshold current and efficiency was determined. A correlation was observed between an abrupt increase in the threshold current on one hand and the onset of optical pulse delay effects on the other hand. Coincident changes in the spectrum and far-field pattern were also observed. A dielectric slab model is used to explain the experimental results. It is also postulated that there was a strong saturable absorption mechanism associated with the n -type region. |
| doi_str_mv | 10.1063/1.1663081 |
| format | Article |
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The doping in the n -type confining layer and the p -type active layer were varied as was the thickness of the active layer. The effect of these device parameters on the temperature variation of the threshold current and efficiency was determined. A correlation was observed between an abrupt increase in the threshold current on one hand and the onset of optical pulse delay effects on the other hand. Coincident changes in the spectrum and far-field pattern were also observed. A dielectric slab model is used to explain the experimental results. 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Phys.; (United States)</title><description>GaAs single heterojunction laser diodes were prepared by epitaxially growing all the layers of the structure. The doping in the n -type confining layer and the p -type active layer were varied as was the thickness of the active layer. The effect of these device parameters on the temperature variation of the threshold current and efficiency was determined. A correlation was observed between an abrupt increase in the threshold current on one hand and the onset of optical pulse delay effects on the other hand. Coincident changes in the spectrum and far-field pattern were also observed. A dielectric slab model is used to explain the experimental results. 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Appl. Phys.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Minden, H T</au><au>Premo, R</au><aucorp>Sperry Research Center, Sudbury, MA</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-temperature GaAs single heterojunction laser diodes</atitle><jtitle>J. Appl. Phys.; (United States)</jtitle><date>1974-10-01</date><risdate>1974</risdate><volume>45</volume><issue>10</issue><spage>4520</spage><epage>4527</epage><pages>4520-4527</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>GaAs single heterojunction laser diodes were prepared by epitaxially growing all the layers of the structure. The doping in the n -type confining layer and the p -type active layer were varied as was the thickness of the active layer. The effect of these device parameters on the temperature variation of the threshold current and efficiency was determined. A correlation was observed between an abrupt increase in the threshold current on one hand and the onset of optical pulse delay effects on the other hand. Coincident changes in the spectrum and far-field pattern were also observed. A dielectric slab model is used to explain the experimental results. It is also postulated that there was a strong saturable absorption mechanism associated with the n -type region.</abstract><cop>United States</cop><doi>10.1063/1.1663081</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | J. Appl. Phys.; (United States), 1974-10, Vol.45 (10), p.4520-4527 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_22142769 |
| source | AIP Digital Archive |
| subjects | 420300 - Engineering- Lasers- (-1989) ARSENIC COMPOUNDS ARSENIDES CRYSTAL GROWTH ENGINEERING EPITAXY FABRICATION GALLIUM ARSENIDES GALLIUM COMPOUNDS LASERS PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS |
| title | High-temperature GaAs single heterojunction laser diodes |
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