Laser-Driven Electron Lensing in Silicon Microstructures

We demonstrate a laser-driven, tunable electron lens fabricated in monolithic silicon. The lens consists of an array of silicon pillars pumped symmetrically by two 300 fs, 1.95  μm wavelength, nJ-class laser pulses from an optical parametric amplifier. The optical near field of the pillar structure...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review letters 2019-03, Vol.122 (10), p.104801-104801, Article 104801
Hauptverfasser: Black, Dylan S, Leedle, Kenneth J, Miao, Yu, Niedermayer, Uwe, Byer, Robert L, Solgaard, Olav
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 104801
container_issue 10
container_start_page 104801
container_title Physical review letters
container_volume 122
creator Black, Dylan S
Leedle, Kenneth J
Miao, Yu
Niedermayer, Uwe
Byer, Robert L
Solgaard, Olav
description We demonstrate a laser-driven, tunable electron lens fabricated in monolithic silicon. The lens consists of an array of silicon pillars pumped symmetrically by two 300 fs, 1.95  μm wavelength, nJ-class laser pulses from an optical parametric amplifier. The optical near field of the pillar structure focuses electrons in the plane perpendicular to the pillar axes. With 100±10  MV/m incident laser fields, the lens focal length is measured to be 50±4  μm, which corresponds to an equivalent quadrupole focusing gradient B^{'} of 1.4±0.1  MT/m. By varying the incident laser field strength, the lens can be tuned from a 21±2  μm focal length (B^{'}>3.3  MT/m) to focal lengths on the centimeter scale.
doi_str_mv 10.1103/PhysRevLett.122.104801
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2201714786</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2207137926</sourcerecordid><originalsourceid>FETCH-LOGICAL-c392t-45ece3aa6a6f54d16014c7ca9a36c428878db2b1850abfddb199ce83b5d4712d3</originalsourceid><addsrcrecordid>eNpdkN9LwzAQx4Mobk7_hTHwxZfOuyRtkkeZ8wdUFH88hzRNtaNrZ9IO9t_bMhXx6Y7j8z3uPoRMEeaIwC6fPnbh2W1T17ZzpHSOwCXgARkjCBUJRH5IxgAMIwUgRuQkhBUAIE3kMRkxUKzvcExkaoLz0bUvt66eLStnW9_Us9TVoazfZ2U9eymr0vajh9L6JrS-s23nXTglR4Wpgjv7rhPydrN8XdxF6ePt_eIqjSxTtI147KxjxiQmKWKeYwLIrbBGGZZYTqUUMs9ohjIGkxV5nqFS1kmWxTkXSHM2IRf7vRvffHYutHpdBuuqytSu6YKmFFAgFzLp0fN_6KrpfN1fN1ACmVB0oJI9NbwTvCv0xpdr43caQQ9u9R-3uner92774PR7fZetXf4b-5HJvgAMIXc2</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2207137926</pqid></control><display><type>article</type><title>Laser-Driven Electron Lensing in Silicon Microstructures</title><source>American Physical Society Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><creator>Black, Dylan S ; Leedle, Kenneth J ; Miao, Yu ; Niedermayer, Uwe ; Byer, Robert L ; Solgaard, Olav</creator><creatorcontrib>Black, Dylan S ; Leedle, Kenneth J ; Miao, Yu ; Niedermayer, Uwe ; Byer, Robert L ; Solgaard, Olav ; ACHIP Collaboration</creatorcontrib><description>We demonstrate a laser-driven, tunable electron lens fabricated in monolithic silicon. The lens consists of an array of silicon pillars pumped symmetrically by two 300 fs, 1.95  μm wavelength, nJ-class laser pulses from an optical parametric amplifier. The optical near field of the pillar structure focuses electrons in the plane perpendicular to the pillar axes. With 100±10  MV/m incident laser fields, the lens focal length is measured to be 50±4  μm, which corresponds to an equivalent quadrupole focusing gradient B^{'} of 1.4±0.1  MT/m. By varying the incident laser field strength, the lens can be tuned from a 21±2  μm focal length (B^{'}&gt;3.3  MT/m) to focal lengths on the centimeter scale.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/PhysRevLett.122.104801</identifier><identifier>PMID: 30932681</identifier><language>eng</language><publisher>United States: American Physical Society</publisher><subject>Field strength ; Lasers ; Lenses ; Parametric amplifiers ; Quadrupoles ; Silicon ; Tunable lasers</subject><ispartof>Physical review letters, 2019-03, Vol.122 (10), p.104801-104801, Article 104801</ispartof><rights>Copyright American Physical Society Mar 15, 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c392t-45ece3aa6a6f54d16014c7ca9a36c428878db2b1850abfddb199ce83b5d4712d3</citedby><cites>FETCH-LOGICAL-c392t-45ece3aa6a6f54d16014c7ca9a36c428878db2b1850abfddb199ce83b5d4712d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2863,2864,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/30932681$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Black, Dylan S</creatorcontrib><creatorcontrib>Leedle, Kenneth J</creatorcontrib><creatorcontrib>Miao, Yu</creatorcontrib><creatorcontrib>Niedermayer, Uwe</creatorcontrib><creatorcontrib>Byer, Robert L</creatorcontrib><creatorcontrib>Solgaard, Olav</creatorcontrib><creatorcontrib>ACHIP Collaboration</creatorcontrib><title>Laser-Driven Electron Lensing in Silicon Microstructures</title><title>Physical review letters</title><addtitle>Phys Rev Lett</addtitle><description>We demonstrate a laser-driven, tunable electron lens fabricated in monolithic silicon. The lens consists of an array of silicon pillars pumped symmetrically by two 300 fs, 1.95  μm wavelength, nJ-class laser pulses from an optical parametric amplifier. The optical near field of the pillar structure focuses electrons in the plane perpendicular to the pillar axes. With 100±10  MV/m incident laser fields, the lens focal length is measured to be 50±4  μm, which corresponds to an equivalent quadrupole focusing gradient B^{'} of 1.4±0.1  MT/m. By varying the incident laser field strength, the lens can be tuned from a 21±2  μm focal length (B^{'}&gt;3.3  MT/m) to focal lengths on the centimeter scale.</description><subject>Field strength</subject><subject>Lasers</subject><subject>Lenses</subject><subject>Parametric amplifiers</subject><subject>Quadrupoles</subject><subject>Silicon</subject><subject>Tunable lasers</subject><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNpdkN9LwzAQx4Mobk7_hTHwxZfOuyRtkkeZ8wdUFH88hzRNtaNrZ9IO9t_bMhXx6Y7j8z3uPoRMEeaIwC6fPnbh2W1T17ZzpHSOwCXgARkjCBUJRH5IxgAMIwUgRuQkhBUAIE3kMRkxUKzvcExkaoLz0bUvt66eLStnW9_Us9TVoazfZ2U9eymr0vajh9L6JrS-s23nXTglR4Wpgjv7rhPydrN8XdxF6ePt_eIqjSxTtI147KxjxiQmKWKeYwLIrbBGGZZYTqUUMs9ohjIGkxV5nqFS1kmWxTkXSHM2IRf7vRvffHYutHpdBuuqytSu6YKmFFAgFzLp0fN_6KrpfN1fN1ACmVB0oJI9NbwTvCv0xpdr43caQQ9u9R-3uner92774PR7fZetXf4b-5HJvgAMIXc2</recordid><startdate>20190315</startdate><enddate>20190315</enddate><creator>Black, Dylan S</creator><creator>Leedle, Kenneth J</creator><creator>Miao, Yu</creator><creator>Niedermayer, Uwe</creator><creator>Byer, Robert L</creator><creator>Solgaard, Olav</creator><general>American Physical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>20190315</creationdate><title>Laser-Driven Electron Lensing in Silicon Microstructures</title><author>Black, Dylan S ; Leedle, Kenneth J ; Miao, Yu ; Niedermayer, Uwe ; Byer, Robert L ; Solgaard, Olav</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c392t-45ece3aa6a6f54d16014c7ca9a36c428878db2b1850abfddb199ce83b5d4712d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Field strength</topic><topic>Lasers</topic><topic>Lenses</topic><topic>Parametric amplifiers</topic><topic>Quadrupoles</topic><topic>Silicon</topic><topic>Tunable lasers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Black, Dylan S</creatorcontrib><creatorcontrib>Leedle, Kenneth J</creatorcontrib><creatorcontrib>Miao, Yu</creatorcontrib><creatorcontrib>Niedermayer, Uwe</creatorcontrib><creatorcontrib>Byer, Robert L</creatorcontrib><creatorcontrib>Solgaard, Olav</creatorcontrib><creatorcontrib>ACHIP Collaboration</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Black, Dylan S</au><au>Leedle, Kenneth J</au><au>Miao, Yu</au><au>Niedermayer, Uwe</au><au>Byer, Robert L</au><au>Solgaard, Olav</au><aucorp>ACHIP Collaboration</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Laser-Driven Electron Lensing in Silicon Microstructures</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2019-03-15</date><risdate>2019</risdate><volume>122</volume><issue>10</issue><spage>104801</spage><epage>104801</epage><pages>104801-104801</pages><artnum>104801</artnum><issn>0031-9007</issn><eissn>1079-7114</eissn><abstract>We demonstrate a laser-driven, tunable electron lens fabricated in monolithic silicon. The lens consists of an array of silicon pillars pumped symmetrically by two 300 fs, 1.95  μm wavelength, nJ-class laser pulses from an optical parametric amplifier. The optical near field of the pillar structure focuses electrons in the plane perpendicular to the pillar axes. With 100±10  MV/m incident laser fields, the lens focal length is measured to be 50±4  μm, which corresponds to an equivalent quadrupole focusing gradient B^{'} of 1.4±0.1  MT/m. By varying the incident laser field strength, the lens can be tuned from a 21±2  μm focal length (B^{'}&gt;3.3  MT/m) to focal lengths on the centimeter scale.</abstract><cop>United States</cop><pub>American Physical Society</pub><pmid>30932681</pmid><doi>10.1103/PhysRevLett.122.104801</doi><tpages>1</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0031-9007
ispartof Physical review letters, 2019-03, Vol.122 (10), p.104801-104801, Article 104801
issn 0031-9007
1079-7114
language eng
recordid cdi_proquest_miscellaneous_2201714786
source American Physical Society Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals
subjects Field strength
Lasers
Lenses
Parametric amplifiers
Quadrupoles
Silicon
Tunable lasers
title Laser-Driven Electron Lensing in Silicon Microstructures
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T06%3A04%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Laser-Driven%20Electron%20Lensing%20in%20Silicon%20Microstructures&rft.jtitle=Physical%20review%20letters&rft.au=Black,%20Dylan%20S&rft.aucorp=ACHIP%20Collaboration&rft.date=2019-03-15&rft.volume=122&rft.issue=10&rft.spage=104801&rft.epage=104801&rft.pages=104801-104801&rft.artnum=104801&rft.issn=0031-9007&rft.eissn=1079-7114&rft_id=info:doi/10.1103/PhysRevLett.122.104801&rft_dat=%3Cproquest_cross%3E2207137926%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2207137926&rft_id=info:pmid/30932681&rfr_iscdi=true