High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure

Resistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of the long endurance of dynamic random‐access memory and the long retention time of flash memories. Recently, resistive memory devices based on organo‐metal halide perovs...

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Veröffentlicht in:	Advanced materials (Weinheim) 2019-05, Vol.31 (21), p.e1804841-n/a
Hauptverfasser:	Kang, Keehoon, Ahn, Heebeom, Song, Younggul, Lee, Woocheol, Kim, Junwoo, Kim, Youngrok, Yoo, Daekyoung, Lee, Takhee
Format:	Artikel
Sprache:	eng
Schlagworte:	cross‐bar array architecture Durability Electric potential Endurance Flash memory (computers) Memory devices Metal halides nonvolatile memory organo‐metal halide perovskite perovskite memory devices Perovskites Power consumption Random access memory resistive switching
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