An electrically driven structural phase transition in single Ag2Te nanowire devices

Exploring new phase-change materials is instrumental in the progression of electronic memory devices. Ag2Te with its reversible structural phase transition, and in the form of nanowires, has become an apt candidate for potential use in nanoscale memory devices. Here, we report a study on the tempera...

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Veröffentlicht in:Nanoscale 2019-01, Vol.11 (14), p.6629-6634
Hauptverfasser: Premasiri, Kasun, Zheng, Wei, Xu, Biao, Ma, Tao, Zhou, Lin, Wu, Yue, Gao, Xuan P A
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container_end_page 6634
container_issue 14
container_start_page 6629
container_title Nanoscale
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creator Premasiri, Kasun
Zheng, Wei
Xu, Biao
Ma, Tao
Zhou, Lin
Wu, Yue
Gao, Xuan P A
description Exploring new phase-change materials is instrumental in the progression of electronic memory devices. Ag2Te with its reversible structural phase transition, and in the form of nanowires, has become an apt candidate for potential use in nanoscale memory devices. Here, we report a study on the temperature- or electrically-driven phase change properties of crystalline Ag2Te nanowires. We first demonstrate that this structural phase change can be achieved via heating up the nanowires, which results in a sharp drop in conductance. Then we show that a DC voltage (
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source Royal Society Of Chemistry Journals 2008-
subjects Electronic devices
Low voltage
Memory devices
Nanotechnology devices
Nanowires
Ohmic dissipation
Phase change materials
Phase transitions
Resistance
Resistance heating
Silver compounds
Tellurides
title An electrically driven structural phase transition in single Ag2Te nanowire devices
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