An electrically driven structural phase transition in single Ag2Te nanowire devices
Exploring new phase-change materials is instrumental in the progression of electronic memory devices. Ag2Te with its reversible structural phase transition, and in the form of nanowires, has become an apt candidate for potential use in nanoscale memory devices. Here, we report a study on the tempera...
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Veröffentlicht in: | Nanoscale 2019-01, Vol.11 (14), p.6629-6634 |
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creator | Premasiri, Kasun Zheng, Wei Xu, Biao Ma, Tao Zhou, Lin Wu, Yue Gao, Xuan P A |
description | Exploring new phase-change materials is instrumental in the progression of electronic memory devices. Ag2Te with its reversible structural phase transition, and in the form of nanowires, has become an apt candidate for potential use in nanoscale memory devices. Here, we report a study on the temperature- or electrically-driven phase change properties of crystalline Ag2Te nanowires. We first demonstrate that this structural phase change can be achieved via heating up the nanowires, which results in a sharp drop in conductance. Then we show that a DC voltage ( |
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Ag2Te with its reversible structural phase transition, and in the form of nanowires, has become an apt candidate for potential use in nanoscale memory devices. Here, we report a study on the temperature- or electrically-driven phase change properties of crystalline Ag2Te nanowires. We first demonstrate that this structural phase change can be achieved via heating up the nanowires, which results in a sharp drop in conductance. Then we show that a DC voltage (<1 V) induced Joule heating can be used to reach the phase transition, even without any external heating. This work shows the potential of using Ag2Te nanowires as a phase-change material in low voltage and low power nanoscale devices.</description><identifier>ISSN: 2040-3364</identifier><identifier>EISSN: 2040-3372</identifier><identifier>DOI: 10.1039/c8nr10000d</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Electronic devices ; Low voltage ; Memory devices ; Nanotechnology devices ; Nanowires ; Ohmic dissipation ; Phase change materials ; Phase transitions ; Resistance ; Resistance heating ; Silver compounds ; Tellurides</subject><ispartof>Nanoscale, 2019-01, Vol.11 (14), p.6629-6634</ispartof><rights>Copyright Royal Society of Chemistry 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Premasiri, Kasun</creatorcontrib><creatorcontrib>Zheng, Wei</creatorcontrib><creatorcontrib>Xu, Biao</creatorcontrib><creatorcontrib>Ma, Tao</creatorcontrib><creatorcontrib>Zhou, Lin</creatorcontrib><creatorcontrib>Wu, Yue</creatorcontrib><creatorcontrib>Gao, Xuan P A</creatorcontrib><title>An electrically driven structural phase transition in single Ag2Te nanowire devices</title><title>Nanoscale</title><description>Exploring new phase-change materials is instrumental in the progression of electronic memory devices. Ag2Te with its reversible structural phase transition, and in the form of nanowires, has become an apt candidate for potential use in nanoscale memory devices. Here, we report a study on the temperature- or electrically-driven phase change properties of crystalline Ag2Te nanowires. We first demonstrate that this structural phase change can be achieved via heating up the nanowires, which results in a sharp drop in conductance. Then we show that a DC voltage (<1 V) induced Joule heating can be used to reach the phase transition, even without any external heating. This work shows the potential of using Ag2Te nanowires as a phase-change material in low voltage and low power nanoscale devices.</description><subject>Electronic devices</subject><subject>Low voltage</subject><subject>Memory devices</subject><subject>Nanotechnology devices</subject><subject>Nanowires</subject><subject>Ohmic dissipation</subject><subject>Phase change materials</subject><subject>Phase transitions</subject><subject>Resistance</subject><subject>Resistance heating</subject><subject>Silver compounds</subject><subject>Tellurides</subject><issn>2040-3364</issn><issn>2040-3372</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNpdjk1LAzEYhIMoWKsXf0HAi5fVJG-Sbo6l-AUFD9ZzSbNvakrM1iRb8d-7oHhwLjMwD8MQcsnZDWdgbl2bMmejuiMyEUyyBmAmjv-ylqfkrJQdY9qAhgl5mSeKEV3NwdkYv2iXwwETLTUPrg7ZRrp_swVpzTaVUEOfaBjrkLYR6XwrVkiTTf1nyEg7PASH5ZyceBsLXvz6lLze360Wj83y-eFpMV82O8FFbTYKN0p3rm299C0TznvJHWgvQHYMjXAzpQV0WtmN8yCcNQ6sMeCBKyktTMn1z-4-9x8Dlrp-D8VhjDZhP5S14EYJLceVEb36h-76Iafx3VoIBqA00xy-AZq_YAY</recordid><startdate>20190101</startdate><enddate>20190101</enddate><creator>Premasiri, Kasun</creator><creator>Zheng, Wei</creator><creator>Xu, Biao</creator><creator>Ma, Tao</creator><creator>Zhou, Lin</creator><creator>Wu, Yue</creator><creator>Gao, Xuan P A</creator><general>Royal Society of Chemistry</general><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>20190101</creationdate><title>An electrically driven structural phase transition in single Ag2Te nanowire devices</title><author>Premasiri, Kasun ; Zheng, Wei ; Xu, Biao ; Ma, Tao ; Zhou, Lin ; Wu, Yue ; Gao, Xuan P A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j212t-b5eb56dc88f4f802cff41c36f234d0e92c75623d65abcf32ca9c3a993f31544a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Electronic devices</topic><topic>Low voltage</topic><topic>Memory devices</topic><topic>Nanotechnology devices</topic><topic>Nanowires</topic><topic>Ohmic dissipation</topic><topic>Phase change materials</topic><topic>Phase transitions</topic><topic>Resistance</topic><topic>Resistance heating</topic><topic>Silver compounds</topic><topic>Tellurides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Premasiri, Kasun</creatorcontrib><creatorcontrib>Zheng, Wei</creatorcontrib><creatorcontrib>Xu, Biao</creatorcontrib><creatorcontrib>Ma, Tao</creatorcontrib><creatorcontrib>Zhou, Lin</creatorcontrib><creatorcontrib>Wu, Yue</creatorcontrib><creatorcontrib>Gao, Xuan P A</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Nanoscale</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Premasiri, Kasun</au><au>Zheng, Wei</au><au>Xu, Biao</au><au>Ma, Tao</au><au>Zhou, Lin</au><au>Wu, Yue</au><au>Gao, Xuan P A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An electrically driven structural phase transition in single Ag2Te nanowire devices</atitle><jtitle>Nanoscale</jtitle><date>2019-01-01</date><risdate>2019</risdate><volume>11</volume><issue>14</issue><spage>6629</spage><epage>6634</epage><pages>6629-6634</pages><issn>2040-3364</issn><eissn>2040-3372</eissn><abstract>Exploring new phase-change materials is instrumental in the progression of electronic memory devices. Ag2Te with its reversible structural phase transition, and in the form of nanowires, has become an apt candidate for potential use in nanoscale memory devices. Here, we report a study on the temperature- or electrically-driven phase change properties of crystalline Ag2Te nanowires. We first demonstrate that this structural phase change can be achieved via heating up the nanowires, which results in a sharp drop in conductance. Then we show that a DC voltage (<1 V) induced Joule heating can be used to reach the phase transition, even without any external heating. This work shows the potential of using Ag2Te nanowires as a phase-change material in low voltage and low power nanoscale devices.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/c8nr10000d</doi><tpages>6</tpages></addata></record> |
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subjects | Electronic devices Low voltage Memory devices Nanotechnology devices Nanowires Ohmic dissipation Phase change materials Phase transitions Resistance Resistance heating Silver compounds Tellurides |
title | An electrically driven structural phase transition in single Ag2Te nanowire devices |
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