Intense Pulsed Light Annealing Process of Indium–Gallium–Zinc–Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors

In this study, an intense pulsed light (IPL) process for annealing an indium–gallium–zinc–oxide (IGZO) semiconductor was conducted via flash white light combined with near-infrared (NIR) and deep-ultraviolet (DUV) drying to form a thin-film transistor (TFT). The IGZO thin-film semiconductor was fabr...

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Veröffentlicht in:	ACS applied materials & interfaces 2019-04, Vol.11 (14), p.13380-13388
Hauptverfasser:	Moon, Chang-Jin, Kim, Hak-Sung
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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