Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p–g–n Junctions

2D atomic sheets of transition metal dichalcogenides (TMDs) have a tremendous potential for next‐generation optoelectronics since they can be stacked layer‐by‐layer to form van der Waals (vdW) heterostructures. This allows not only bypassing difficulties in heteroepitaxy of lattice‐mismatched semico...

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Veröffentlicht in:	Advanced materials (Weinheim) 2019-02, Vol.31 (6), p.e1805656-n/a
Hauptverfasser:	Li, Alei, Chen, Qianxue, Wang, Peipei, Gan, Yuan, Qi, Tailei, Wang, Peng, Tang, Fangdong, Wu, Judy Z., Chen, Rui, Zhang, Liyuan, Gong, Youpin
Format:	Artikel
Sprache:	eng
Schlagworte:	2D materials Atomic properties Broadband Electric fields Electrical junctions Electromagnetic absorption Graphene Heterostructures Infrared radiation Interlayers Materials science Metal sheets Molybdenum compounds Optoelectronics photodetectors Photonics Sensitivity enhancement Spectral sensitivity Tellurides Tin disulfide Transition metal compounds transition‐metal dichalcogenides van der Waals heterostructures
Online-Zugang:	Volltext
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