Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions

Integrating two-dimensional (2D) materials with ferroelectric thin films may result in unique characteristics and novel applications due to the coupling between their intrinsic characters. Here, we observed the ferroelectric resistive switching behavior in both graphene/BFO and MoS2/BFO heterojuncti...

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Veröffentlicht in:	Nanoscale 2018-12, Vol.10 (48), p.23080-23086
Hauptverfasser:	Yang, Li, Xue-Yin, Sun, Cheng-Yan, Xu, Cao, Jian, Zhao-Yuan, Sun, Liang Zhen
Format:	Artikel
Sprache:	eng
Schlagworte:	Bismuth ferrite Depletion Ferroelectric materials Ferroelectricity Ferroelectrics Graphene Heterojunctions Memory devices Molybdenum disulfide Switching Thin films Two dimensional materials
Online-Zugang:	Volltext
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