Fabrication and Characterization of a Sensing Device Based on Porous Silicon

In this work we have fabricated a simple gas‐sensing device based on porous silicon. Starting from the well‐known porous silicon photoluminescence quenching due to oxygen, we have optimized the material and the device design, obtaining a reversible and stable O2 gas sensor. A simple and cheap detect...

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 2000-11, Vol.182 (1), p.473-477
Hauptverfasser: Quercia, L., Cerullo, F., La Ferrara, V., Di Francia, G., Baratto, C., Fagilia, G.
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container_end_page 477
container_issue 1
container_start_page 473
container_title Physica status solidi. A, Applied research
container_volume 182
creator Quercia, L.
Cerullo, F.
La Ferrara, V.
Di Francia, G.
Baratto, C.
Fagilia, G.
description In this work we have fabricated a simple gas‐sensing device based on porous silicon. Starting from the well‐known porous silicon photoluminescence quenching due to oxygen, we have optimized the material and the device design, obtaining a reversible and stable O2 gas sensor. A simple and cheap detector of air leaks in inert environment is of great interest for the alimentary industry. Full characterization of the device has been carried out in a gas sensor calibration apparatus, showing even a promising sensitivity at room temperature to a toxic gas like NO2.
doi_str_mv 10.1002/1521-396X(200011)182:1<473::AID-PSSA473>3.0.CO;2-K
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source Wiley Online Library Journals Frontfile Complete
subjects Current density
Electrochemistry
Etching
Fabrication
Leakage (fluid)
Nitrogen oxides
Oxygen
Oxygen sensors
Photoluminescence
Silicon wafers
title Fabrication and Characterization of a Sensing Device Based on Porous Silicon
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