Improving modulation bandwidth of c-plane GaN-based light-emitting diodes by an ultra-thin quantum wells design

The GaN-based light emitting diodes (LEDs) have a great potential for visible light communication (VLC) due to their ubiquitous application in general lighting, but the modulation bandwidth of conventional c-plane LEDs is limited by carrier recombination rate in InGaN quantum wells (QWs) due to the...

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Veröffentlicht in:	Optics express 2018-09, Vol.26 (19), p.24985-24991
Hauptverfasser:	Rajabi, Kamran, Wang, Jiaxing, Jin, Jie, Xing, Yuchen, Wang, Lai, Han, Yanjun, Sun, Changzheng, Hao, Zhibiao, Luo, Yi, Qian, Keyuan, Chen, Chien-Ju, Wu, Meng-Chyi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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