Direct Patterning of p‑Type-Doped Few-layer WSe2 Nanoelectronic Devices by Oxidation Scanning Probe Lithography

Direct, robust, and high-resolution patterning methods are needed to downscale the lateral size of two-dimensional materials to observe new properties and optimize the overall processing of these materials. In this work, we report a fabrication process where the initial microchannel of a few-layer W...

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Veröffentlicht in:	ACS applied materials & interfaces 2018-11, Vol.10 (46), p.40054-40061
Hauptverfasser:	Dago, A. I, Ryu, Y. K, Palomares, F. J, Garcia, R
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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