Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors

2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post‐silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering for these materials to create high‐performance devices while adapting for large‐area fabrica...

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Veröffentlicht in:	Advanced materials (Weinheim) 2019-01, Vol.31 (2), p.e1804422-n/a
Hauptverfasser:	Chee, Sang‐Soo, Seo, Dongpyo, Kim, Hanggyu, Jang, Hanbyeol, Lee, Seungmin, Moon, Seung Pil, Lee, Kyu Hyoung, Kim, Sung Wng, Choi, Hyunyong, Ham, Moon‐Ho
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical synthesis Chemical vapor deposition Contact resistance Electric contacts Electrodes Fermi level field‐effect transistors Graphene Materials science Molybdenum disulfide Nanoelectronics Optoelectronics Organic chemistry Photoelectricity Semiconductor devices Silver Titanium Transistors Transition metal compounds transition metal dichalcogenides
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