Growth of 2D GaN Single Crystals on Liquid Metals
Two-dimensional (2D) gallium nitride (GaN) has been highly anticipated because its quantum confinement effect enables desirable deep-ultraviolet emission, excitonic effect and electronic transport properties. However, the currently obtained 2D GaN can only exist as intercalated layers of atomically...
Gespeichert in:
| Veröffentlicht in: | Journal of the American Chemical Society 2018-12, Vol.140 (48), p.16392-16395 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 16395 |
|---|---|
| container_issue | 48 |
| container_start_page | 16392 |
| container_title | Journal of the American Chemical Society |
| container_volume | 140 |
| creator | Chen, Yunxu Liu, Keli Liu, Jinxin Lv, Tianrui Wei, Bin Zhang, Tao Zeng, Mengqi Wang, Zhongchang Fu, Lei |
| description | Two-dimensional (2D) gallium nitride (GaN) has been highly anticipated because its quantum confinement effect enables desirable deep-ultraviolet emission, excitonic effect and electronic transport properties. However, the currently obtained 2D GaN can only exist as intercalated layers of atomically thin quantum wells or nanometer-scale islands, limiting further exploration of its intrinsic characteristics. Here, we report, for the first time, the growth of micrometer-sized 2D GaN single crystals on liquid metals via a surface-confined nitridation reaction and demonstrate that the 2D GaN shows uniformly incremental lattice, unique phonon modes, blue-shifted photoluminescence emission and improved internal quantum efficiency, providing direct evidence to the previous theoretical predictions. The as-grown 2D GaN exhibits an electronic mobility of 160 cm2·V–1·s–1. These findings pave the way to potential optoelectronic applications of 2D GaN single crystals. |
| doi_str_mv | 10.1021/jacs.8b08351 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2127954161</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2127954161</sourcerecordid><originalsourceid>FETCH-LOGICAL-a390t-2227c531acdbc0d30793bb4000f39775e9e86fbf2f2225875392bb9f2f6a36b53</originalsourceid><addsrcrecordid>eNptkL1PwzAQxS0EoqGwMSOPDKT4o47tERUoSAUGYLbsxIZUadzaiVD_exy1wMJ0eqffvbt7AJxjNMGI4OulLuNEGCQowwcgw4ygnGFSHIIMIURyLgo6AicxLpOcEoGPwYgiKoaBDOB58F_dJ_QOkls418_wtW4_GgtnYRs73UToW7ioN31dwSc7NE7BkUvFnu3rGLzf373NHvLFy_xxdrPINZWoywkhvGQU67IyJaoo4pIaM003OCo5Z1ZaUTjjiEskE5xRSYyRSReaFobRMbjc-a6D3_Q2dmpVx9I2jW6t76MimHDJprjACb3aoWXwMQbr1DrUKx22CiM1hKSGkNQ-pIRf7J17s7LVL_yTyt_qYWrp-9CmR__3-gZle2zD</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2127954161</pqid></control><display><type>article</type><title>Growth of 2D GaN Single Crystals on Liquid Metals</title><source>American Chemical Society Journals</source><creator>Chen, Yunxu ; Liu, Keli ; Liu, Jinxin ; Lv, Tianrui ; Wei, Bin ; Zhang, Tao ; Zeng, Mengqi ; Wang, Zhongchang ; Fu, Lei</creator><creatorcontrib>Chen, Yunxu ; Liu, Keli ; Liu, Jinxin ; Lv, Tianrui ; Wei, Bin ; Zhang, Tao ; Zeng, Mengqi ; Wang, Zhongchang ; Fu, Lei</creatorcontrib><description>Two-dimensional (2D) gallium nitride (GaN) has been highly anticipated because its quantum confinement effect enables desirable deep-ultraviolet emission, excitonic effect and electronic transport properties. However, the currently obtained 2D GaN can only exist as intercalated layers of atomically thin quantum wells or nanometer-scale islands, limiting further exploration of its intrinsic characteristics. Here, we report, for the first time, the growth of micrometer-sized 2D GaN single crystals on liquid metals via a surface-confined nitridation reaction and demonstrate that the 2D GaN shows uniformly incremental lattice, unique phonon modes, blue-shifted photoluminescence emission and improved internal quantum efficiency, providing direct evidence to the previous theoretical predictions. The as-grown 2D GaN exhibits an electronic mobility of 160 cm2·V–1·s–1. These findings pave the way to potential optoelectronic applications of 2D GaN single crystals.</description><identifier>ISSN: 0002-7863</identifier><identifier>EISSN: 1520-5126</identifier><identifier>DOI: 10.1021/jacs.8b08351</identifier><identifier>PMID: 30380835</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>Journal of the American Chemical Society, 2018-12, Vol.140 (48), p.16392-16395</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a390t-2227c531acdbc0d30793bb4000f39775e9e86fbf2f2225875392bb9f2f6a36b53</citedby><cites>FETCH-LOGICAL-a390t-2227c531acdbc0d30793bb4000f39775e9e86fbf2f2225875392bb9f2f6a36b53</cites><orcidid>0000-0003-1356-4422 ; 0000-0001-5076-4082</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/jacs.8b08351$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/jacs.8b08351$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/30380835$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Chen, Yunxu</creatorcontrib><creatorcontrib>Liu, Keli</creatorcontrib><creatorcontrib>Liu, Jinxin</creatorcontrib><creatorcontrib>Lv, Tianrui</creatorcontrib><creatorcontrib>Wei, Bin</creatorcontrib><creatorcontrib>Zhang, Tao</creatorcontrib><creatorcontrib>Zeng, Mengqi</creatorcontrib><creatorcontrib>Wang, Zhongchang</creatorcontrib><creatorcontrib>Fu, Lei</creatorcontrib><title>Growth of 2D GaN Single Crystals on Liquid Metals</title><title>Journal of the American Chemical Society</title><addtitle>J. Am. Chem. Soc</addtitle><description>Two-dimensional (2D) gallium nitride (GaN) has been highly anticipated because its quantum confinement effect enables desirable deep-ultraviolet emission, excitonic effect and electronic transport properties. However, the currently obtained 2D GaN can only exist as intercalated layers of atomically thin quantum wells or nanometer-scale islands, limiting further exploration of its intrinsic characteristics. Here, we report, for the first time, the growth of micrometer-sized 2D GaN single crystals on liquid metals via a surface-confined nitridation reaction and demonstrate that the 2D GaN shows uniformly incremental lattice, unique phonon modes, blue-shifted photoluminescence emission and improved internal quantum efficiency, providing direct evidence to the previous theoretical predictions. The as-grown 2D GaN exhibits an electronic mobility of 160 cm2·V–1·s–1. These findings pave the way to potential optoelectronic applications of 2D GaN single crystals.</description><issn>0002-7863</issn><issn>1520-5126</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNptkL1PwzAQxS0EoqGwMSOPDKT4o47tERUoSAUGYLbsxIZUadzaiVD_exy1wMJ0eqffvbt7AJxjNMGI4OulLuNEGCQowwcgw4ygnGFSHIIMIURyLgo6AicxLpOcEoGPwYgiKoaBDOB58F_dJ_QOkls418_wtW4_GgtnYRs73UToW7ioN31dwSc7NE7BkUvFnu3rGLzf373NHvLFy_xxdrPINZWoywkhvGQU67IyJaoo4pIaM003OCo5Z1ZaUTjjiEskE5xRSYyRSReaFobRMbjc-a6D3_Q2dmpVx9I2jW6t76MimHDJprjACb3aoWXwMQbr1DrUKx22CiM1hKSGkNQ-pIRf7J17s7LVL_yTyt_qYWrp-9CmR__3-gZle2zD</recordid><startdate>20181205</startdate><enddate>20181205</enddate><creator>Chen, Yunxu</creator><creator>Liu, Keli</creator><creator>Liu, Jinxin</creator><creator>Lv, Tianrui</creator><creator>Wei, Bin</creator><creator>Zhang, Tao</creator><creator>Zeng, Mengqi</creator><creator>Wang, Zhongchang</creator><creator>Fu, Lei</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0003-1356-4422</orcidid><orcidid>https://orcid.org/0000-0001-5076-4082</orcidid></search><sort><creationdate>20181205</creationdate><title>Growth of 2D GaN Single Crystals on Liquid Metals</title><author>Chen, Yunxu ; Liu, Keli ; Liu, Jinxin ; Lv, Tianrui ; Wei, Bin ; Zhang, Tao ; Zeng, Mengqi ; Wang, Zhongchang ; Fu, Lei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a390t-2227c531acdbc0d30793bb4000f39775e9e86fbf2f2225875392bb9f2f6a36b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Yunxu</creatorcontrib><creatorcontrib>Liu, Keli</creatorcontrib><creatorcontrib>Liu, Jinxin</creatorcontrib><creatorcontrib>Lv, Tianrui</creatorcontrib><creatorcontrib>Wei, Bin</creatorcontrib><creatorcontrib>Zhang, Tao</creatorcontrib><creatorcontrib>Zeng, Mengqi</creatorcontrib><creatorcontrib>Wang, Zhongchang</creatorcontrib><creatorcontrib>Fu, Lei</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Journal of the American Chemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Yunxu</au><au>Liu, Keli</au><au>Liu, Jinxin</au><au>Lv, Tianrui</au><au>Wei, Bin</au><au>Zhang, Tao</au><au>Zeng, Mengqi</au><au>Wang, Zhongchang</au><au>Fu, Lei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of 2D GaN Single Crystals on Liquid Metals</atitle><jtitle>Journal of the American Chemical Society</jtitle><addtitle>J. Am. Chem. Soc</addtitle><date>2018-12-05</date><risdate>2018</risdate><volume>140</volume><issue>48</issue><spage>16392</spage><epage>16395</epage><pages>16392-16395</pages><issn>0002-7863</issn><eissn>1520-5126</eissn><abstract>Two-dimensional (2D) gallium nitride (GaN) has been highly anticipated because its quantum confinement effect enables desirable deep-ultraviolet emission, excitonic effect and electronic transport properties. However, the currently obtained 2D GaN can only exist as intercalated layers of atomically thin quantum wells or nanometer-scale islands, limiting further exploration of its intrinsic characteristics. Here, we report, for the first time, the growth of micrometer-sized 2D GaN single crystals on liquid metals via a surface-confined nitridation reaction and demonstrate that the 2D GaN shows uniformly incremental lattice, unique phonon modes, blue-shifted photoluminescence emission and improved internal quantum efficiency, providing direct evidence to the previous theoretical predictions. The as-grown 2D GaN exhibits an electronic mobility of 160 cm2·V–1·s–1. These findings pave the way to potential optoelectronic applications of 2D GaN single crystals.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>30380835</pmid><doi>10.1021/jacs.8b08351</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-1356-4422</orcidid><orcidid>https://orcid.org/0000-0001-5076-4082</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0002-7863 |
| ispartof | Journal of the American Chemical Society, 2018-12, Vol.140 (48), p.16392-16395 |
| issn | 0002-7863 1520-5126 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_2127954161 |
| source | American Chemical Society Journals |
| title | Growth of 2D GaN Single Crystals on Liquid Metals |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T20%3A57%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%202D%20GaN%20Single%20Crystals%20on%20Liquid%20Metals&rft.jtitle=Journal%20of%20the%20American%20Chemical%20Society&rft.au=Chen,%20Yunxu&rft.date=2018-12-05&rft.volume=140&rft.issue=48&rft.spage=16392&rft.epage=16395&rft.pages=16392-16395&rft.issn=0002-7863&rft.eissn=1520-5126&rft_id=info:doi/10.1021/jacs.8b08351&rft_dat=%3Cproquest_cross%3E2127954161%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2127954161&rft_id=info:pmid/30380835&rfr_iscdi=true |