One-Dimensional Atomic Segregation at Semiconductor–Metal Interfaces of Polymorphic Transition Metal Dichalcogenide Monolayers

Interface segregation is a powerful approach to tailor properties of bulk materials by interface engineering. Nevertheless, little is known about the chemical inhomogeneity at interfaces of polymorphic two-dimensional transition metal dichalcogenides (TMDs) and its influence on the properties of the...

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Veröffentlicht in:	Nano letters 2018-10, Vol.18 (10), p.6157-6163
Hauptverfasser:	Wang, Ziqian, Luo, Min, Ning, Shoucong, Ito, Yoshikazu, Kashani, Hamzeh, Zhang, Xuanyi, Chen, Mingwei
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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