Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity

The rapid cadence of MOSFET scaling is stimulating the development of new technologies and accelerating the introduction of new semiconducting materials as silicon alternative. In this context, 2D materials with a unique layered structure have attracted tremendous interest in recent years, mainly mo...

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Veröffentlicht in:	Nanotechnology 2018-10, Vol.29 (42), p.425602-425602
Hauptverfasser:	Chiappe, Daniele, Ludwig, Jonathan, Leonhardt, Alessandra, El Kazzi, Salim, Nalin Mehta, Ankit, Nuytten, Thomas, Celano, Umberto, Sutar, Surajit, Pourtois, Geoffrey, Caymax, Matty, Paredis, Kristof, Vandervorst, Wilfried, Lin, Dennis, De Gendt, Stefan, Barla, Kathy, Huyghebaert, Cedric, Asselberghs, Inge, Radu, Iuliana
Format:	Artikel
Sprache:	eng
Schlagworte:	2D materials MO-CVD MoS thin films
Online-Zugang:	Volltext
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