Advanced CMOS process for floating gate field-effect transistors in bioelectronic applications

We present a complementary metal oxide semiconductor (CMOS) process with floating gate field-effect transistors (FG FETs) as sensor inputs for bioelectronic applications. In order to achieve a stable passivation of the devices against electrolyte solutions, we included additional fabrication steps a...

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Veröffentlicht in:	Sensors and actuators. B, Chemical Chemical, 2007-12, Vol.128 (1), p.208-217
Hauptverfasser:	Meyburg, Sven, Stockmann, Regina, Moers, Jürgen, Offenhäusser, Andreas, Ingebrandt, Sven
Format:	Artikel
Sprache:	eng
Schlagworte:	Complementary metal oxide semiconductor (CMOS) Extracellular recording Feed line passivation Field-effect transistor (FET) Floating gate Low pressure chemical vapour deposition (LPCVD)
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