Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer

Current aperture vertical electron transistor (CAVET) was successfully demonstrated by using Mg-implanted GaN as a current blocking layer for nonalloyed source contacts. A maximum source-drain current of (corresponding to 0.22 A/mm of source) and an extrinsic transconductance of 54 mS/mm of source w...

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Veröffentlicht in:	IEEE electron device letters 2008-06, Vol.29 (6), p.543-545
Hauptverfasser:	Chowdhury, S., Swenson, B.L., Mishra, U.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN/GaN Aluminum gallium nitride Apertures Applied sciences current aperture vertical electron transistor (CAVET) Electronics Electrons Etching Exact sciences and technology Gallium nitride hbox{CF}_{4} plasma treatment Mg implanted Microelectronic fabrication (materials and surfaces technology) normally off Plasma applications Plasma devices Plasma sources Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Threshold voltage Transconductance Transistors
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