Improved Performance of F-Ions-Implanted Poly-Si Thin-Film Transistors Using Solid Phase Crystallization and Excimer Laser Crystallization

Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) metho...

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Veröffentlicht in:	Journal of display technology 2007-03, Vol.3 (1), p.45-51
Hauptverfasser:	Chun-Hao Tu, Ting-Chang Chang, Po-Tsun Liu, Che-Yu Yang, Li-Wei Feng, Chia-Chou Tsai, Li-Ting Chang, Yung-Chun Wu, Sze, S.M., Chun-Yen Chang
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystallization Density Displays Electric variables Excimer laser crystallization ( ELC ) Excimer lasers F-ions implant Hot carriers Hydrogen Optical device fabrication polycrystalline silicon thin-film transistors (poly-Si TFTs) Rapid thermal annealing Semiconductor devices Silicon Solid lasers Solid phases SPC Statistical process control Thin film transistors Transistors
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