Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy
Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WS...
Gespeichert in:
Veröffentlicht in: | ACS applied materials & interfaces 2018-06, Vol.10 (24), p.20213-20218 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WSe2 using photoexcited charge collection spectroscopy (PECCS). Monolayer, few-layer, and multilayer WSe2 can be probed in top-gate field-effect transistor platforms, and their interband transitions are efficiently observed. Our theoretical calculations show a great coincidence with the PECCS results, proving that the indirect Γ–K and Γ–Λ transitions as well as the direct K–K transition are clearly resolved in multilayer WSe2 by PECCS. |
---|---|
ISSN: | 1944-8244 1944-8252 |
DOI: | 10.1021/acsami.8b04056 |