Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy

Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WS...

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Veröffentlicht in:ACS applied materials & interfaces 2018-06, Vol.10 (24), p.20213-20218
Hauptverfasser: Choi, Kyunghee, Lee, Kimoon, Yu, Sanghyuck, Oh, Sehoon, Choi, Hyoung Joon, Bae, Heesun, Im, Seongil
Format: Artikel
Sprache:eng
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Zusammenfassung:Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WSe2 using photoexcited charge collection spectroscopy (PECCS). Monolayer, few-layer, and multilayer WSe2 can be probed in top-gate field-effect transistor platforms, and their interband transitions are efficiently observed. Our theoretical calculations show a great coincidence with the PECCS results, proving that the indirect Γ–K and Γ–Λ transitions as well as the direct K–K transition are clearly resolved in multilayer WSe2 by PECCS.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.8b04056