High-Temperature Magnetism in Graphene Induced by Proximity to EuO

Addition of magnetism to spectacular properties of graphene may lead to novel topological states and design of spin logic devices enjoying low power consumption. A significant progress is made in defect-induced magnetism in grapheneselective elimination of p z orbitals (by vacancies or adatoms) at...

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Veröffentlicht in:	ACS applied materials & interfaces 2018-06, Vol.10 (24), p.20767-20774
Hauptverfasser:	Averyanov, Dmitry V, Sokolov, Ivan S, Tokmachev, Andrey M, Parfenov, Oleg E, Karateev, Igor A, Taldenkov, Alexander N, Storchak, Vyacheslav G
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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