Gap‐Mode Surface‐Plasmon‐Enhanced Photoluminescence and Photoresponse of MoS2

2D materials hold great potential for designing novel electronic and optoelectronic devices. However, 2D material can only absorb limited incident light. As a representative 2D semiconductor, monolayer MoS2 can only absorb up to 10% of the incident light in the visible, which is not sufficient to ac...

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Veröffentlicht in:Advanced materials (Weinheim) 2018-07, Vol.30 (27), p.e1706527-n/a
Hauptverfasser: Wu, Zhi‐Qian, Yang, Jing‐Liang, Manjunath, Nallappagar K., Zhang, Yue‐Jiao, Feng, Si‐Rui, Lu, Yang‐Hua, Wu, Jiang‐Hong, Zhao, Wei‐Wei, Qiu, Cai‐Yu, Li, Jian‐Feng, Lin, Shi‐Sheng
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Sprache:eng
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