Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers

In this work, we developed a charge control sandwich structure around QD layers for the inverted QLEDs, the performance of which is shown to exceed that of the conventional QLEDs in terms of the external quantum efficiency (EQE) and the current efficiency (CE). The QD light-emitting layer (EML) is s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS applied materials & interfaces 2018-05, Vol.10 (20), p.17295-17300
Hauptverfasser: Fu, Yan, Jiang, Wei, Kim, Daekyoung, Lee, Woosuk, Chae, Heeyeop
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 17300
container_issue 20
container_start_page 17295
container_title ACS applied materials & interfaces
container_volume 10
creator Fu, Yan
Jiang, Wei
Kim, Daekyoung
Lee, Woosuk
Chae, Heeyeop
description In this work, we developed a charge control sandwich structure around QD layers for the inverted QLEDs, the performance of which is shown to exceed that of the conventional QLEDs in terms of the external quantum efficiency (EQE) and the current efficiency (CE). The QD light-emitting layer (EML) is sandwiched with two ultrathin interfacial layers: one is a poly­(9-vinlycarbazole) (PVK) layer to prevent excess electrons, and the other is a polyethylenimine ethoxylated (PEIE) layer to reduce the hole injection barrier. The sandwich structure resolves the imbalance between injected holes and electrons and brings the level of balanced charge carriers to a maximum. We demonstrated the highly improved performance of 89.8 cd/A of current efficiency, 22.4% of external quantum efficiency, and 72 814 cd m–2 of maximum brightness with the solution-processed inverted QLED. This sandwich structure (PVK/QD/PEIE), as a framework, can be applied to various QLED devices for enhancing performance.
doi_str_mv 10.1021/acsami.8b05092
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2036786893</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2036786893</sourcerecordid><originalsourceid>FETCH-LOGICAL-a330t-4a309c2010e3c14e38b822af338ea510fb569d3d97a22676ca4361640fa39fab3</originalsourceid><addsrcrecordid>eNp1kM1LAzEQxYMotlavHmWPImzNx34epbZaKCio55DNzrYp2U1Nskr_eyNbe_M0j-H3HjMPoWuCpwRTci-kE62aFhVOcUlP0JiUSRIXNKWnR50kI3Th3BbjjFGcnqMRLXNWUJqOkX5W643eR_OmUVJB5yPR1dGi12H3ZnTvleniV2skOAd1tOy-wPogVsHm43mrvFfdOnpUpgYXfSu_iWYbYdcQzUznrdHB4sFqsQfrLtFZI7SDq8OcoI_F_H32HK9enpazh1UsGMM-TgTDpaSYYGCSJMCKKhwrGsYKECnBTZVmZc3qMheUZnkmRcIykiW4EaxsRMUm6HbI3Vnz2YPzvFVOgtaiA9M7TjHL8iIrShbQ6YBKa5yz0PCdVa2we04w_22YDw3zQ8PBcHPI7qsW6iP-V2kA7gYgGPnW9LYLr_6X9gPBbIaf</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2036786893</pqid></control><display><type>article</type><title>Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers</title><source>ACS Publications</source><creator>Fu, Yan ; Jiang, Wei ; Kim, Daekyoung ; Lee, Woosuk ; Chae, Heeyeop</creator><creatorcontrib>Fu, Yan ; Jiang, Wei ; Kim, Daekyoung ; Lee, Woosuk ; Chae, Heeyeop</creatorcontrib><description>In this work, we developed a charge control sandwich structure around QD layers for the inverted QLEDs, the performance of which is shown to exceed that of the conventional QLEDs in terms of the external quantum efficiency (EQE) and the current efficiency (CE). The QD light-emitting layer (EML) is sandwiched with two ultrathin interfacial layers: one is a poly­(9-vinlycarbazole) (PVK) layer to prevent excess electrons, and the other is a polyethylenimine ethoxylated (PEIE) layer to reduce the hole injection barrier. The sandwich structure resolves the imbalance between injected holes and electrons and brings the level of balanced charge carriers to a maximum. We demonstrated the highly improved performance of 89.8 cd/A of current efficiency, 22.4% of external quantum efficiency, and 72 814 cd m–2 of maximum brightness with the solution-processed inverted QLED. This sandwich structure (PVK/QD/PEIE), as a framework, can be applied to various QLED devices for enhancing performance.</description><identifier>ISSN: 1944-8244</identifier><identifier>EISSN: 1944-8252</identifier><identifier>DOI: 10.1021/acsami.8b05092</identifier><identifier>PMID: 29738225</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>ACS applied materials &amp; interfaces, 2018-05, Vol.10 (20), p.17295-17300</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a330t-4a309c2010e3c14e38b822af338ea510fb569d3d97a22676ca4361640fa39fab3</citedby><cites>FETCH-LOGICAL-a330t-4a309c2010e3c14e38b822af338ea510fb569d3d97a22676ca4361640fa39fab3</cites><orcidid>0000-0002-6380-0414</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acsami.8b05092$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acsami.8b05092$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,2752,27053,27901,27902,56713,56763</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/29738225$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Fu, Yan</creatorcontrib><creatorcontrib>Jiang, Wei</creatorcontrib><creatorcontrib>Kim, Daekyoung</creatorcontrib><creatorcontrib>Lee, Woosuk</creatorcontrib><creatorcontrib>Chae, Heeyeop</creatorcontrib><title>Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers</title><title>ACS applied materials &amp; interfaces</title><addtitle>ACS Appl. Mater. Interfaces</addtitle><description>In this work, we developed a charge control sandwich structure around QD layers for the inverted QLEDs, the performance of which is shown to exceed that of the conventional QLEDs in terms of the external quantum efficiency (EQE) and the current efficiency (CE). The QD light-emitting layer (EML) is sandwiched with two ultrathin interfacial layers: one is a poly­(9-vinlycarbazole) (PVK) layer to prevent excess electrons, and the other is a polyethylenimine ethoxylated (PEIE) layer to reduce the hole injection barrier. The sandwich structure resolves the imbalance between injected holes and electrons and brings the level of balanced charge carriers to a maximum. We demonstrated the highly improved performance of 89.8 cd/A of current efficiency, 22.4% of external quantum efficiency, and 72 814 cd m–2 of maximum brightness with the solution-processed inverted QLED. This sandwich structure (PVK/QD/PEIE), as a framework, can be applied to various QLED devices for enhancing performance.</description><issn>1944-8244</issn><issn>1944-8252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kM1LAzEQxYMotlavHmWPImzNx34epbZaKCio55DNzrYp2U1Nskr_eyNbe_M0j-H3HjMPoWuCpwRTci-kE62aFhVOcUlP0JiUSRIXNKWnR50kI3Th3BbjjFGcnqMRLXNWUJqOkX5W643eR_OmUVJB5yPR1dGi12H3ZnTvleniV2skOAd1tOy-wPogVsHm43mrvFfdOnpUpgYXfSu_iWYbYdcQzUznrdHB4sFqsQfrLtFZI7SDq8OcoI_F_H32HK9enpazh1UsGMM-TgTDpaSYYGCSJMCKKhwrGsYKECnBTZVmZc3qMheUZnkmRcIykiW4EaxsRMUm6HbI3Vnz2YPzvFVOgtaiA9M7TjHL8iIrShbQ6YBKa5yz0PCdVa2we04w_22YDw3zQ8PBcHPI7qsW6iP-V2kA7gYgGPnW9LYLr_6X9gPBbIaf</recordid><startdate>20180523</startdate><enddate>20180523</enddate><creator>Fu, Yan</creator><creator>Jiang, Wei</creator><creator>Kim, Daekyoung</creator><creator>Lee, Woosuk</creator><creator>Chae, Heeyeop</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-6380-0414</orcidid></search><sort><creationdate>20180523</creationdate><title>Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers</title><author>Fu, Yan ; Jiang, Wei ; Kim, Daekyoung ; Lee, Woosuk ; Chae, Heeyeop</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a330t-4a309c2010e3c14e38b822af338ea510fb569d3d97a22676ca4361640fa39fab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fu, Yan</creatorcontrib><creatorcontrib>Jiang, Wei</creatorcontrib><creatorcontrib>Kim, Daekyoung</creatorcontrib><creatorcontrib>Lee, Woosuk</creatorcontrib><creatorcontrib>Chae, Heeyeop</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>ACS applied materials &amp; interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fu, Yan</au><au>Jiang, Wei</au><au>Kim, Daekyoung</au><au>Lee, Woosuk</au><au>Chae, Heeyeop</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers</atitle><jtitle>ACS applied materials &amp; interfaces</jtitle><addtitle>ACS Appl. Mater. Interfaces</addtitle><date>2018-05-23</date><risdate>2018</risdate><volume>10</volume><issue>20</issue><spage>17295</spage><epage>17300</epage><pages>17295-17300</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>In this work, we developed a charge control sandwich structure around QD layers for the inverted QLEDs, the performance of which is shown to exceed that of the conventional QLEDs in terms of the external quantum efficiency (EQE) and the current efficiency (CE). The QD light-emitting layer (EML) is sandwiched with two ultrathin interfacial layers: one is a poly­(9-vinlycarbazole) (PVK) layer to prevent excess electrons, and the other is a polyethylenimine ethoxylated (PEIE) layer to reduce the hole injection barrier. The sandwich structure resolves the imbalance between injected holes and electrons and brings the level of balanced charge carriers to a maximum. We demonstrated the highly improved performance of 89.8 cd/A of current efficiency, 22.4% of external quantum efficiency, and 72 814 cd m–2 of maximum brightness with the solution-processed inverted QLED. This sandwich structure (PVK/QD/PEIE), as a framework, can be applied to various QLED devices for enhancing performance.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>29738225</pmid><doi>10.1021/acsami.8b05092</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-6380-0414</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 1944-8244
ispartof ACS applied materials & interfaces, 2018-05, Vol.10 (20), p.17295-17300
issn 1944-8244
1944-8252
language eng
recordid cdi_proquest_miscellaneous_2036786893
source ACS Publications
title Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T15%3A49%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Highly%20Efficient%20and%20Fully%20Solution-Processed%20Inverted%20Light-Emitting%20Diodes%20with%20Charge%20Control%20Interlayers&rft.jtitle=ACS%20applied%20materials%20&%20interfaces&rft.au=Fu,%20Yan&rft.date=2018-05-23&rft.volume=10&rft.issue=20&rft.spage=17295&rft.epage=17300&rft.pages=17295-17300&rft.issn=1944-8244&rft.eissn=1944-8252&rft_id=info:doi/10.1021/acsami.8b05092&rft_dat=%3Cproquest_cross%3E2036786893%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2036786893&rft_id=info:pmid/29738225&rfr_iscdi=true