Charge‐Trap Memory Based on Hybrid 0D Quantum Dot–2D WSe2 Structure

Recently, layered ultrathin 2D semiconductors, such as MoS2 and WSe2 are widely studied in nonvolatile memories because of their excellent electronic properties. Additionally, discrete 0D metallic nanocrystals and quantum dots (QDs) are considered to be outstanding charge‐trap materials. Here, a cha...

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Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2018-05, Vol.14 (20), p.e1800319-n/a
Hauptverfasser:	Hou, Xiang, Zhang, Heng, Liu, Chunsen, Ding, Shijin, Bao, Wenzhong, Zhang, David Wei, Zhou, Peng
Format:	Artikel
Sprache:	eng
Schlagworte:	2D semiconductors Aluminum oxide Cadmium selenides Charge materials charge‐trap memory Data storage Endurance Memory devices memory window Molybdenum disulfide Nanotechnology Quantum dots Semiconductors
Online-Zugang:	Volltext
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