Angular-Shaped Naphthalene Bis(1,5-diamide-2,6-diylidene)­malononitrile for High-Performance, Air-Stable N‑Type Organic Field-Effect Transistors

Angular-Shaped Naphthalene Bis(1,5-diamide-2,6-diylidene)­malononitrile for High-Performance, Air-Stable N‑Type Organic Field-Effect Transistors

The synthesis, characterization, and application of two angular-shaped naphthalene bis­(1,5-diamide-2,6-diylidene)­malono­nitriles (NBAMs) as high-performance air-stable n-type organic field effect transistor (OFET) materials are reported. NBAM derivatives exhibit deep lowest-unoccupied molecular or...

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Veröffentlicht in:Organic letters 2018-05, Vol.20 (9), p.2538-2542
Hauptverfasser: Dhondge, Attrimuni P, Tsai, Pei-Chung, Nien, Chiao-Yun, Xu, Wei-Yu, Chen, Po-Ming, Hsu, Yu-Hung, Li, Kan-Wei, Yen, Feng-Ming, Tseng, Shin-Lun, Chang, Yu-Chang, Chen, Henry J. H, Kuo, Ming-Yu
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Sprache:eng
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Zusammenfassung:The synthesis, characterization, and application of two angular-shaped naphthalene bis­(1,5-diamide-2,6-diylidene)­malono­nitriles (NBAMs) as high-performance air-stable n-type organic field effect transistor (OFET) materials are reported. NBAM derivatives exhibit deep lowest-unoccupied molecular orbital (LUMO) levels, suitable for air-stable n-type OFETs. The OFET device based on NBAM-EH fabricated by vapor deposition exhibits a maximum electron mobility of 0.63 cm2 V–1 s–1 in air with an on/off current ratio (I on/I off) of 105.
ISSN:1523-7060
1523-7052
DOI:10.1021/acs.orglett.8b00684