Origin of Negative Capacitance in Bipolar Organic Diodes
Negative differential capacitance (NC) occurring at low frequencies in organic light-emitting diodes (OLEDs) is a poorly understood phenomenon. We study the origin of the NC effect by systematically varying the number of electron traps in OLEDs based on the polymeric semiconductor poly(p-phenylene v...
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Veröffentlicht in: | Physical review letters 2018-03, Vol.120 (11), p.116602-116602, Article 116602 |
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creator | Niu, Quan Crăciun, N Irina Wetzelaer, Gert-Jan A H Blom, Paul W M |
description | Negative differential capacitance (NC) occurring at low frequencies in organic light-emitting diodes (OLEDs) is a poorly understood phenomenon. We study the origin of the NC effect by systematically varying the number of electron traps in OLEDs based on the polymeric semiconductor poly(p-phenylene vinylene). Increasing the electron trap density enhances the NC effect. The magnitude and observed decrease of the relaxation time is consistent with the (inverse) rate of trap-assisted recombination. The absence of NC in a nearly trap-free light-emitting diode unambiguously shows that trap-assisted recombination is the responsible mechanism for the negative contribution to the capacitance in bipolar organic diodes. Our results reveal that the NC effect can be exploited to quantitatively determine the number of traps in organic semiconductors in a nondestructive fashion. |
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We study the origin of the NC effect by systematically varying the number of electron traps in OLEDs based on the polymeric semiconductor poly(p-phenylene vinylene). Increasing the electron trap density enhances the NC effect. The magnitude and observed decrease of the relaxation time is consistent with the (inverse) rate of trap-assisted recombination. The absence of NC in a nearly trap-free light-emitting diode unambiguously shows that trap-assisted recombination is the responsible mechanism for the negative contribution to the capacitance in bipolar organic diodes. 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Our results reveal that the NC effect can be exploited to quantitatively determine the number of traps in organic semiconductors in a nondestructive fashion.</description><subject>Capacitance</subject><subject>Diodes</subject><subject>Electron traps</subject><subject>Organic light emitting diodes</subject><subject>Organic semiconductors</subject><subject>Polyphenylene vinylene</subject><subject>Relaxation time</subject><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNpdkE1LAzEQhoMotlb_Qlnw4mXrTLIk2aPWTyhWRM8hm87WlHa3JruF_nu3tIp4Gph53pfhYWyIMEIEcf36uY1vtJlQ04yQ75ZSAj9ifQSVpwoxO2Z9AIFpDqB67CzGBQAgl_qU9XguAVWGfaanwc99ldRl8kJz2_gNJWO7ts43tnKUdKdbv66XNiTTMLeVd8mdr2cUz9lJaZeRLg5zwD4e7t_HT-lk-vg8vpmkToi8SW1GUgmXk8syULPSqkJ2PyipodRSZ04SR0sKipLLAguuHGqJSIIX-QytGLCrfe861F8txcasfHS0XNqK6jYaDhwyjSqXHXr5D13Ubai67wxH1EJnqHRHyT3lQh1joNKsg1_ZsDUIZufW_HFrOrdm77YLDg_1bbGi2W_sR6b4BnltdZo</recordid><startdate>20180316</startdate><enddate>20180316</enddate><creator>Niu, Quan</creator><creator>Crăciun, N Irina</creator><creator>Wetzelaer, Gert-Jan A H</creator><creator>Blom, Paul W M</creator><general>American Physical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>20180316</creationdate><title>Origin of Negative Capacitance in Bipolar Organic Diodes</title><author>Niu, Quan ; Crăciun, N Irina ; Wetzelaer, Gert-Jan A H ; Blom, Paul W M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c339t-a4e673c9ec4407dfa7b62687680f8684c6e21ae70bf26b1b27c18611e32b9d1a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Capacitance</topic><topic>Diodes</topic><topic>Electron traps</topic><topic>Organic light emitting diodes</topic><topic>Organic semiconductors</topic><topic>Polyphenylene vinylene</topic><topic>Relaxation time</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Niu, Quan</creatorcontrib><creatorcontrib>Crăciun, N Irina</creatorcontrib><creatorcontrib>Wetzelaer, Gert-Jan A H</creatorcontrib><creatorcontrib>Blom, Paul W M</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Niu, Quan</au><au>Crăciun, N Irina</au><au>Wetzelaer, Gert-Jan A H</au><au>Blom, Paul W M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Origin of Negative Capacitance in Bipolar Organic Diodes</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2018-03-16</date><risdate>2018</risdate><volume>120</volume><issue>11</issue><spage>116602</spage><epage>116602</epage><pages>116602-116602</pages><artnum>116602</artnum><issn>0031-9007</issn><eissn>1079-7114</eissn><abstract>Negative differential capacitance (NC) occurring at low frequencies in organic light-emitting diodes (OLEDs) is a poorly understood phenomenon. We study the origin of the NC effect by systematically varying the number of electron traps in OLEDs based on the polymeric semiconductor poly(p-phenylene vinylene). Increasing the electron trap density enhances the NC effect. The magnitude and observed decrease of the relaxation time is consistent with the (inverse) rate of trap-assisted recombination. The absence of NC in a nearly trap-free light-emitting diode unambiguously shows that trap-assisted recombination is the responsible mechanism for the negative contribution to the capacitance in bipolar organic diodes. Our results reveal that the NC effect can be exploited to quantitatively determine the number of traps in organic semiconductors in a nondestructive fashion.</abstract><cop>United States</cop><pub>American Physical Society</pub><pmid>29601741</pmid><doi>10.1103/PhysRevLett.120.116602</doi><tpages>1</tpages></addata></record> |
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subjects | Capacitance Diodes Electron traps Organic light emitting diodes Organic semiconductors Polyphenylene vinylene Relaxation time |
title | Origin of Negative Capacitance in Bipolar Organic Diodes |
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