Depth Profiling and Cross-Sectional Laser Ablation Ionization Mass Spectrometry Studies of Through-Silicon-Vias

Through-silicon-via (TSV) technology enables 3D integration of multiple 2D components in advanced microchip architectures. Key in the TSV fabrication is an additive-assisted Cu electroplating process in which the additives employed may get embedded in the TSV body. This incorporation negatively infl...

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Veröffentlicht in:	Analytical chemistry (Washington) 2018-04, Vol.90 (8), p.5179-5186
Hauptverfasser:	Grimaudo, Valentine, Moreno-García, Pavel, Cedeño López, Alena, Riedo, Andreas, Wiesendanger, Reto, Tulej, Marek, Gruber, Cynthia, Lörtscher, Emanuel, Wurz, Peter, Broekmann, Peter
Format:	Artikel
Sprache:	eng
Schlagworte:	3-D technology Acoustic microscopes Additives Auger microscopy Augers Chemical analysis Chemistry Concentration gradient Depth profiling Electroplating Femtosecond pulsed lasers Ionization Laser ablation Lasers Mass spectrometry Organic chemistry Physical properties Quantitative analysis Scanning acoustic microscopy Scientific imaging Silicon Spectroscopy
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