High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane

High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane

High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material a...

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Veröffentlicht in:ACS applied materials & interfaces 2018-04, Vol.10 (15), p.12870-12877
Hauptverfasser: Cho, Minkyu, Yun, Jeonghoon, Kwon, Donguk, Kim, Kyuyoung, Park, Inkyu
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container_end_page 12877
container_issue 15
container_start_page 12870
container_title ACS applied materials & interfaces
container_volume 10
creator Cho, Minkyu
Yun, Jeonghoon
Kwon, Donguk
Kim, Kyuyoung
Park, Inkyu
description High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material and an electrode, respectively. The top-down fabrication process of flexible Pd/SiNM diode H2 sensor is facile compared to other existing bottom-up fabricated flexible gas sensors while showing excellent H2 sensitivity (ΔI/I 0 > 700–0.5% H2 concentrations) and fast response time (τ10–90 = 22 s) at room temperature. In addition, selectivity, humidity, and mechanical tests verify that the sensor has excellent reliability and robustness under various environments. The operating power consumption of the sensor is only in the nanowatt range, which indicates its potential applications in low-power portable and wearable electronics.
doi_str_mv 10.1021/acsami.8b01583
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title High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane
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