Charge‐Trapping‐Induced Non‐Ideal Behaviors in Organic Field‐Effect Transistors

Organic field‐effect transistors (OFETs) with impressively high hole mobilities over 10 cm2 V−1 s−1 and electron mobilities over 1 cm2 V−1 s−1 have been reported in the past few years. However, significant non‐ideal electrical characteristics, e.g., voltage‐dependent mobilities, have been widely obs...

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Veröffentlicht in:	Advanced materials (Weinheim) 2018-05, Vol.30 (18), p.e1800017-n/a
Hauptverfasser:	Un, Hio‐Ieng, Cheng, Peng, Lei, Ting, Yang, Chi‐Yuan, Wang, Jie‐Yu, Pei, Jian
Format:	Artikel
Sprache:	eng
Schlagworte:	charge trapping Current carriers Dielectrics Field effect transistors Functional groups Molecular chains non‐ideal behavior organic field‐effect transistors scanning Kelvin probe microscopy Semiconductor devices Transistors Trapping
Online-Zugang:	Volltext
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