Contact‐Engineered Electrical Properties of MoS2 Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules

Although 2D molybdenum disulfide (MoS2) has gained much attention due to its unique electrical and optical properties, the limited electrical contact to 2D semiconductors still impedes the realization of high‐performance 2D MoS2‐based devices. In this regard, many studies have been conducted to impr...

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Veröffentlicht in:Advanced materials (Weinheim) 2018-05, Vol.30 (18), p.e1705540-n/a
Hauptverfasser: Cho, Kyungjune, Pak, Jinsu, Kim, Jae‐Keun, Kang, Keehoon, Kim, Tae‐Young, Shin, Jiwon, Choi, Barbara Yuri, Chung, Seungjun, Lee, Takhee
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Sprache:eng
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