Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability

Black phosphorus (BP) has drawn great attention owing to its tunable band gap depending on thickness, high mobility, and large I on/I off ratio, which makes BP attractive for using in future two-dimensional electronic and optoelectronic devices. However, its instability under ambient conditions pose...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	ACS applied materials & interfaces 2018-03, Vol.10 (11), p.9663-9668
Hauptverfasser:	Lv, Weiming, Yang, Bingchao, Wang, Bochong, Wan, Wenhui, Ge, Yanfeng, Yang, Ruilong, Hao, Chunxue, Xiang, Jianyong, Zhang, Baoshun, Zeng, Zhongming, Liu, Zhongyuan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!