A 0.2 V Micro‐Electromechanical Switch Enabled by a Phase Transition

Micro‐electromechanical (MEM) switches, with advantages such as quasi‐zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal‐oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges mus...

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Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2018-04, Vol.14 (14), p.e1703621-n/a
Hauptverfasser:	Dong, Kaichen, Choe, Hwan Sung, Wang, Xi, Liu, Huili, Saha, Bivas, Ko, Changhyun, Deng, Yang, Tom, Kyle B., Lou, Shuai, Wang, Letian, Grigoropoulos, Costas P., You, Zheng, Yao, Jie, Wu, Junqiao
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Circuits CMOS Electric potential Hybrid systems Leakage current Micro‐electromechanical systems Nanotechnology Operating cycles Phase transitions Power consumption sub 1 V operating voltages switch Switches Vanadium dioxide
Online-Zugang:	Volltext
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