Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate

GaN nanowires are promising for optical and optoelectronic applications because of their waveguiding properties and large optical band gap. However, developing a precise, scalable, and cost-effective fabrication method with a high degree of controllability to obtain high-aspect-ratio nanowires with...

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Veröffentlicht in:	ACS nano 2018-03, Vol.12 (3), p.2373-2380
Hauptverfasser:	Behzadirad, Mahmoud, Nami, Mohsen, Wostbrock, Neal, Zamani Kouhpanji, Mohammad Reza, Feezell, Daniel F, Brueck, Steven R. J, Busani, Tito
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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