Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p‑Type Oxide Semiconductor
p-Type SnO thin films were deposited on a Si substrate by a cosputtering process using ceramic SnO and metal Sn targets at room temperature without adding oxygen. By varying the dc sputtering power applied to the Sn target while maintaining a constant radio frequency power to the SnO target, the Sn/...
Gespeichert in:
Veröffentlicht in: | ACS applied materials & interfaces 2018-01, Vol.10 (4), p.3810-3821 |
---|---|
Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!