Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p‑Type Oxide Semiconductor

p-Type SnO thin films were deposited on a Si substrate by a cosputtering process using ceramic SnO and metal Sn targets at room temperature without adding oxygen. By varying the dc sputtering power applied to the Sn target while maintaining a constant radio frequency power to the SnO target, the Sn/...

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Veröffentlicht in:ACS applied materials & interfaces 2018-01, Vol.10 (4), p.3810-3821
Hauptverfasser: Lee, Seung Jun, Jang, Younjin, Kim, Han Joon, Hwang, Eun Suk, Jeon, Seok Min, Kim, Jun Shik, Moon, Taehwan, Jang, Kyung-Tae, Joo, Young-Chang, Cho, Deok-Yong, Hwang, Cheol Seong
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Sprache:eng
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