A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor

WSe2 has attracted extensive attention for p-FETs due to its air stability and high mobility. However, the Fermi level of WSe2 is close to the middle of the band gap, which will induce a high contact resistance with metals and thus limit the field effect mobility. In this case, a high work voltage i...

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Veröffentlicht in:	Nanoscale 2018-01, Vol.10 (4), p.1727-1734
Hauptverfasser:	Yin, Chong, Wang, Xudong, Chen, Yan, Li, Dan, Lin, Tie, Sun, Shuo, Shen, Hong, Du, Piyi, Sun, Jinglan, Meng, Xiangjian, Chu, Junhao, Wong, Hon Fai, Leung, Chi Wah, Wang, Zongrong, Wang, Jianlu
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Contact resistance Doping Electric potential Fermi level Ferroelectric materials Ferroelectricity Field effect transistors Hole mobility Phase transitions Polymers Relaxors Semiconductor devices Silicon
Online-Zugang:	Volltext
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