Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors

We observe that the growth rate of Ga_{2}O_{3} in plasma-assisted molecular beam epitaxy can be drastically enhanced by an additional In supply. This enhancement is shown to result from a catalytic effect, namely, the rapid formation of In_{2}O_{3}, immediately followed by a transformation of In_{2}...

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Veröffentlicht in:	Physical review letters 2017-11, Vol.119 (19), p.196001-196001, Article 196001
Hauptverfasser:	Vogt, Patrick, Brandt, Oliver, Riechert, Henning, Lähnemann, Jonas, Bierwagen, Oliver
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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