Multilayer graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide

Multilayer graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide

A graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide is proposed and analyzed. By embedding four graphene layers in the double-stripe silicon nitride waveguide and the graphene layers co-electrode design, the total metal-graphene contact resistance can be...

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Veröffentlicht in:Optics express 2017-09, Vol.25 (18), p.21619-21629
Hauptverfasser: Fan, Meiyong, Yang, Huimin, Zheng, Pengfei, Hu, Guohua, Yun, Binfeng, Cui, Yiping
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container_end_page 21629
container_issue 18
container_start_page 21619
container_title Optics express
container_volume 25
creator Fan, Meiyong
Yang, Huimin
Zheng, Pengfei
Hu, Guohua
Yun, Binfeng
Cui, Yiping
description A graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide is proposed and analyzed. By embedding four graphene layers in the double-stripe silicon nitride waveguide and the graphene layers co-electrode design, the total metal-graphene contact resistance can be reduced 50% and as high as 30.6GHz modulation bandwidth can be achieved theoretically. The calculated extinction ratio and figure of merit are 0.1658dB/um and 9.7, respectively. And the required switching voltage from its minimum to maximum absorption state is 3.8180V and 780.50fJ/bit power consuming can be achieved. The proposed modulator can remedy the lack of high speed modulator on the passive silicon nitride waveguide.
doi_str_mv 10.1364/oe.25.021619
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title Multilayer graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide
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