Structure and mechanical properties of He-implanted SiC

The changes in microstructure and mechanical properties of 4H-SiC implanted at room temperature with 50keV helium ions have been studied. Up to 1×1016cm−2, no significant change in mechanical properties is observed. Nevertheless, the as-created damage that induce a normal strain profile of few perce...

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Veröffentlicht in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2008-06, Vol.266 (12-13), p.2776-2779
Hauptverfasser:	Tromas, C., Audurier, V., Leclerc, S., Beaufort, M.F., Declémy, A., Barbot, J.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Implantation Mechanical properties Nanoindentation Silicon carbide
Online-Zugang:	Volltext
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