Origin of Analyte-Induced Porous Silicon Photoluminescence Quenching

Origin of Analyte-Induced Porous Silicon Photoluminescence Quenching

We report on gaseous analyte-induced photoluminescence (PL) quenching of porous silicon, as-prepared (ap-pSi) and oxidized (ox-pSi). By using steady-state and emission wavelength-dependent time-resolved intensity luminescence measurements in concert with a global analysis scheme, we find that the an...

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Veröffentlicht in:Applied spectroscopy 2017-09, Vol.71 (9), p.2136-2145
Hauptverfasser: Reynard, Justin M., Van Gorder, Nathan S., Bright, Frank V.
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Van Gorder, Nathan S.
Bright, Frank V.
description We report on gaseous analyte-induced photoluminescence (PL) quenching of porous silicon, as-prepared (ap-pSi) and oxidized (ox-pSi). By using steady-state and emission wavelength-dependent time-resolved intensity luminescence measurements in concert with a global analysis scheme, we find that the analyte-induced quenching is best described by a three-component static quenching model. In the model, there are blue, green, and red emitters (associated with the nanocrystallite core and surface trap states) that each exhibit unique analyte-emitter association constants and these association constants are a consequence of differences in the pSi surface chemistries.
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title Origin of Analyte-Induced Porous Silicon Photoluminescence Quenching
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