InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off

We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate with...

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Veröffentlicht in:	Optics express 2017-07, Vol.25 (15), p.17562-17570
Hauptverfasser:	Kim, HoSung, Ahn, Seung-Yeop, Kim, SangHyeon, Ryu, GeunHwan, Kyhm, Ji Hoon, Lee, Kyung Woon, Park, Jung Ho, Choi, Won Jun
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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