Transparent p-CuI/n-BaSnO3−δ heterojunctions with a high rectification ratio
Transparent p-CuI/n-BaSnO3−δ heterojunction diodes were successfully fabricated by the thermal evaporation of a (1 1 1) oriented γ-phase CuI film on top of an epitaxial BaSnO3-δ(0 0 1) film grown by the pulsed laser deposition. Upon the thickness of the CuI film being increased from 30 to 400 nm, th...
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| Veröffentlicht in: | Journal of physics. Condensed matter 2017-09, Vol.29 (38), p.384004-384004 |
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| container_end_page | 384004 |
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| container_issue | 38 |
| container_start_page | 384004 |
| container_title | Journal of physics. Condensed matter |
| container_volume | 29 |
| creator | Lee, Jeong Hyuk Lee, Woong-Jhae Kim, Tai Hoon Lee, Takhee Hong, Seunghun Kim, Kee Hoon |
| description | Transparent p-CuI/n-BaSnO3−δ heterojunction diodes were successfully fabricated by the thermal evaporation of a (1 1 1) oriented γ-phase CuI film on top of an epitaxial BaSnO3-δ(0 0 1) film grown by the pulsed laser deposition. Upon the thickness of the CuI film being increased from 30 to 400 nm, the hole carrier density was systematically reduced from 6.0 × 1019 to 1.0 × 1019 cm−3 and the corresponding rectification ratio of the pn diode was proportionally enhanced from ~10 to ~106. An energy band diagram exhibiting the type-II band alignment is proposed to describe the behavior of the heterojunction diode. A shift of a built-in potential caused by the hole carrier density change in the CuI film is attributed to the thickness-dependent rectification ratio. The best performing p-CuI/n-BaSnO3−δ diode exhibited a high current rectification ratio of 6.75 × 105 at ±2 V and an ideality factor of ~1.5. |
| doi_str_mv | 10.1088/1361-648X/aa7cbf |
| format | Article |
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Upon the thickness of the CuI film being increased from 30 to 400 nm, the hole carrier density was systematically reduced from 6.0 × 1019 to 1.0 × 1019 cm−3 and the corresponding rectification ratio of the pn diode was proportionally enhanced from ~10 to ~106. An energy band diagram exhibiting the type-II band alignment is proposed to describe the behavior of the heterojunction diode. A shift of a built-in potential caused by the hole carrier density change in the CuI film is attributed to the thickness-dependent rectification ratio. 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The best performing p-CuI/n-BaSnO3−δ diode exhibited a high current rectification ratio of 6.75 × 105 at ±2 V and an ideality factor of ~1.5.</description><subject>BaSnO</subject><subject>copper iodide (CuI)</subject><subject>heterostructure</subject><subject>high mobility</subject><subject>transparent pn diode</subject><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNptkMtKAzEUhoMoWKt7l7PThbG5TS5LLVULhS6s4C6kmYyT0mbGyQy-gmufxefwIXwSM1RcCQd-OP_H4fABcI7RNUZSTjDlGHImnyfGCLsuD8Dob3UIRkjlFEol2TE4iXGDEGKSshFYrloTYmNaF7qsgdN-Pgnw1jyGJf1-__j6zCrXubbe9MF2vg4xe_NdlZms8i9V1rq0LL01Q5W1Q5yCo9Jsozv7zTF4uputpg9wsbyfT28W0JNcdFBwahy1Buei4KWQlqk1R0ZxyaUqeEFSSzCTQhSlEyVWheHUWouZVQpzQsfgcn-3aevX3sVO73y0brs1wdV91FjhnDJClEzoxR71daM3dd-G9Ji2O02UpjINSzJ0U5SJvPqHxEgPhvWgUw869d4w_QF9iHBD</recordid><startdate>20170927</startdate><enddate>20170927</enddate><creator>Lee, Jeong Hyuk</creator><creator>Lee, Woong-Jhae</creator><creator>Kim, Tai Hoon</creator><creator>Lee, Takhee</creator><creator>Hong, Seunghun</creator><creator>Kim, Kee Hoon</creator><general>IOP Publishing</general><scope>7X8</scope></search><sort><creationdate>20170927</creationdate><title>Transparent p-CuI/n-BaSnO3−δ heterojunctions with a high rectification ratio</title><author>Lee, Jeong Hyuk ; Lee, Woong-Jhae ; Kim, Tai Hoon ; Lee, Takhee ; Hong, Seunghun ; Kim, Kee Hoon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i257t-763ae3ca157d6f78c49b60a968689d6d2ae3214877dfe7f19da63ccc14c991623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BaSnO</topic><topic>copper iodide (CuI)</topic><topic>heterostructure</topic><topic>high mobility</topic><topic>transparent pn diode</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Jeong Hyuk</creatorcontrib><creatorcontrib>Lee, Woong-Jhae</creatorcontrib><creatorcontrib>Kim, Tai Hoon</creatorcontrib><creatorcontrib>Lee, Takhee</creatorcontrib><creatorcontrib>Hong, Seunghun</creatorcontrib><creatorcontrib>Kim, Kee Hoon</creatorcontrib><collection>MEDLINE - Academic</collection><jtitle>Journal of physics. Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Jeong Hyuk</au><au>Lee, Woong-Jhae</au><au>Kim, Tai Hoon</au><au>Lee, Takhee</au><au>Hong, Seunghun</au><au>Kim, Kee Hoon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transparent p-CuI/n-BaSnO3−δ heterojunctions with a high rectification ratio</atitle><jtitle>Journal of physics. Condensed matter</jtitle><stitle>JPhysCM</stitle><addtitle>J. Phys.: Condens. Matter</addtitle><date>2017-09-27</date><risdate>2017</risdate><volume>29</volume><issue>38</issue><spage>384004</spage><epage>384004</epage><pages>384004-384004</pages><issn>0953-8984</issn><eissn>1361-648X</eissn><coden>JCOMEL</coden><abstract>Transparent p-CuI/n-BaSnO3−δ heterojunction diodes were successfully fabricated by the thermal evaporation of a (1 1 1) oriented γ-phase CuI film on top of an epitaxial BaSnO3-δ(0 0 1) film grown by the pulsed laser deposition. Upon the thickness of the CuI film being increased from 30 to 400 nm, the hole carrier density was systematically reduced from 6.0 × 1019 to 1.0 × 1019 cm−3 and the corresponding rectification ratio of the pn diode was proportionally enhanced from ~10 to ~106. An energy band diagram exhibiting the type-II band alignment is proposed to describe the behavior of the heterojunction diode. A shift of a built-in potential caused by the hole carrier density change in the CuI film is attributed to the thickness-dependent rectification ratio. The best performing p-CuI/n-BaSnO3−δ diode exhibited a high current rectification ratio of 6.75 × 105 at ±2 V and an ideality factor of ~1.5.</abstract><pub>IOP Publishing</pub><doi>10.1088/1361-648X/aa7cbf</doi><tpages>8</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | BaSnO copper iodide (CuI) heterostructure high mobility transparent pn diode |
| title | Transparent p-CuI/n-BaSnO3−δ heterojunctions with a high rectification ratio |
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