Structural, optical and electronic properties of a Mg incorporated GaN nanowall network

We report the growth of a Mg incorporated GaN nanowall network (NwN) by using a plasma assisted molecular beam epitaxy (PA-MBE) system that was characterized by photoluminescence (PL) spectroscopy, Raman spectroscopy, high-resolution X-ray diffraction (HR-XRD), X-ray photoelectron spectroscopy (XPS)...

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Veröffentlicht in:	RSC advances 2017-01, Vol.7 (42), p.25998-26005
Hauptverfasser:	Nayak, Sanjay Kumar, Gupta, Mukul, Shivaprasad, S. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Fermi level Nanostructure Networks Secondary ion mass spectroscopy Valence band X ray diffraction X-ray photoelectron spectroscopy
Online-Zugang:	Volltext
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