Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states
A theoretical study of an interfacial phase change memory made of a GeTe-Sb2Te3 superlattice with W electrodes is presented to identify the high and low resistance states and the switching mechanism. The ferro structure of the GeTe layer block in the Te-Ge-Te-Ge sequence can be in the low resistance...
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| Veröffentlicht in: | Nanoscale 2017-07, Vol.9 (27), p.9386-9395 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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