UV–Ozone Interfacial Modification in Organic Transistors for High‐Sensitivity NO2 Detection

A new type of nitrogen dioxide (NO2) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low‐cost UV–ozone (UVO)‐treated polymeric gate dielectric is reported here. The NO2 sensitivity of these TFTs with the dielectric surface UVO treatment is ≈400× greater f...

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Veröffentlicht in:	Advanced materials (Weinheim) 2017-08, Vol.29 (31), p.n/a
Hauptverfasser:	Huang, Wei, Zhuang, Xinming, Melkonyan, Ferdinand S., Wang, Binghao, Zeng, Li, Wang, Gang, Han, Shijiao, Bedzyk, Michael J., Yu, Junsheng, Marks, Tobin J., Facchetti, Antonio
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic force microscopy Chemical composition Chemical reactions Dielectrics Fourier transforms Gas sensors Grazing Infrared spectroscopy interface trap Materials science Nitrogen dioxide nitrogen dioxide sensors organic thin‐film transistors Ozone Photoelectron spectroscopy Semiconductor devices Sensitivity Spectrum analysis Thin film transistors Transistors UV–ozone X-ray diffraction
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