Analysis on temperature dependent current mechanism of tunnel field-effect transistors
In this paper, the total drain current (ID) of a tunnel FET (TFET) is decomposed into each current component with different origins to analyze the ID formation mechanisms of the TFET as a function of gate voltage (VGS). Transfer characteristics are firstly extracted with fabricated Silicon channel T...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2016-06, Vol.55 (6S1), p.6-06GG03 |
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| container_end_page | 06GG03 |
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| container_issue | 6S1 |
| container_start_page | 6 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 55 |
| creator | Lee, Junil Kwon, Dae Woong Kim, Hyun Woo Kim, Jang Hyun Park, Euyhwan Park, Taehyung Kim, Sihyun Lee, Ryoongbin Lee, Jong-Ho Park, Byung-Gook |
| description | In this paper, the total drain current (ID) of a tunnel FET (TFET) is decomposed into each current component with different origins to analyze the ID formation mechanisms of the TFET as a function of gate voltage (VGS). Transfer characteristics are firstly extracted with fabricated Silicon channel TFETs (Si TFETs) and silicon germanium channel TFETs (SiGe TFETs) at various temperatures. The subthreshold swings (SS) of both Si TFETs and SiGe TFETs get degraded and the SSs of SiGe TFETs get degraded more as temperature becomes higher. Then, all the IDs measured at various temperatures are decomposed into each current component through technology computer aided design (TCAD) simulations with a good agreement with experimental data. As a result, it is revealed that Shockley-Read-Hall (SRH) recombination mainly contribute to the ID of a TFET before band to band tunneling (BTBT) occurs. Furthermore, the SS degradation by high temperature is explained successfully by the SRH recombination with electric field dependence. |
| doi_str_mv | 10.7567/JJAP.55.06GG03 |
| format | Article |
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Transfer characteristics are firstly extracted with fabricated Silicon channel TFETs (Si TFETs) and silicon germanium channel TFETs (SiGe TFETs) at various temperatures. The subthreshold swings (SS) of both Si TFETs and SiGe TFETs get degraded and the SSs of SiGe TFETs get degraded more as temperature becomes higher. Then, all the IDs measured at various temperatures are decomposed into each current component through technology computer aided design (TCAD) simulations with a good agreement with experimental data. As a result, it is revealed that Shockley-Read-Hall (SRH) recombination mainly contribute to the ID of a TFET before band to band tunneling (BTBT) occurs. Furthermore, the SS degradation by high temperature is explained successfully by the SRH recombination with electric field dependence.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.55.06GG03</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Channels ; Decomposition ; Degradation ; Field effect transistors ; Semiconductor devices ; Silicon ; Silicon germanides ; Tunnels (transportation)</subject><ispartof>Japanese Journal of Applied Physics, 2016-06, Vol.55 (6S1), p.6-06GG03</ispartof><rights>2016 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c408t-80dd539d993abd85f259c680b23520ca3dffb239d0e5dd1cdc600ee3ca9a1fbe3</citedby><cites>FETCH-LOGICAL-c408t-80dd539d993abd85f259c680b23520ca3dffb239d0e5dd1cdc600ee3ca9a1fbe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.55.06GG03/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27903,27904,53824,53871</link.rule.ids></links><search><creatorcontrib>Lee, Junil</creatorcontrib><creatorcontrib>Kwon, Dae Woong</creatorcontrib><creatorcontrib>Kim, Hyun Woo</creatorcontrib><creatorcontrib>Kim, Jang Hyun</creatorcontrib><creatorcontrib>Park, Euyhwan</creatorcontrib><creatorcontrib>Park, Taehyung</creatorcontrib><creatorcontrib>Kim, Sihyun</creatorcontrib><creatorcontrib>Lee, Ryoongbin</creatorcontrib><creatorcontrib>Lee, Jong-Ho</creatorcontrib><creatorcontrib>Park, Byung-Gook</creatorcontrib><title>Analysis on temperature dependent current mechanism of tunnel field-effect transistors</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>In this paper, the total drain current (ID) of a tunnel FET (TFET) is decomposed into each current component with different origins to analyze the ID formation mechanisms of the TFET as a function of gate voltage (VGS). Transfer characteristics are firstly extracted with fabricated Silicon channel TFETs (Si TFETs) and silicon germanium channel TFETs (SiGe TFETs) at various temperatures. The subthreshold swings (SS) of both Si TFETs and SiGe TFETs get degraded and the SSs of SiGe TFETs get degraded more as temperature becomes higher. Then, all the IDs measured at various temperatures are decomposed into each current component through technology computer aided design (TCAD) simulations with a good agreement with experimental data. As a result, it is revealed that Shockley-Read-Hall (SRH) recombination mainly contribute to the ID of a TFET before band to band tunneling (BTBT) occurs. Furthermore, the SS degradation by high temperature is explained successfully by the SRH recombination with electric field dependence.</description><subject>Channels</subject><subject>Decomposition</subject><subject>Degradation</subject><subject>Field effect transistors</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><subject>Silicon germanides</subject><subject>Tunnels (transportation)</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqVkEtLxDAUhYMoOD62rrsUofWmaTrNchh0dBhQ8LENmeQGW9q0Juli_r0dOn_A1bkXvnMWHyF3FLIlL5eP2-3qPeM8g3KzAXZGFpQVy7SAkp-TBUBO00Lk-SW5CqGZ3pIXdEG-V061h1CHpHdJxG5Ar-LoMTE4oDPoYqJH74_Zof5Rrg5d0tskjs5hm9gaW5OitahjEr1y01LsfbghF1a1AW9PeU2-np8-1y_p7m3zul7tUl1AFdMKjOFMGCGY2puK25wLXVawzxnPQStmrJ1uYQC5MVQbXQIgMq2EonaP7Jrcz7uD739HDFF2ddDYtsphPwZJBRQ5CGDlhGYzqn0fgkcrB193yh8kBXkUKI8CJedyFjgVHuZC3Q-y6Uc_mQr_g5tGDUeo_KAnUA7Gsj9g14GD</recordid><startdate>20160601</startdate><enddate>20160601</enddate><creator>Lee, Junil</creator><creator>Kwon, Dae Woong</creator><creator>Kim, Hyun Woo</creator><creator>Kim, Jang Hyun</creator><creator>Park, Euyhwan</creator><creator>Park, Taehyung</creator><creator>Kim, Sihyun</creator><creator>Lee, Ryoongbin</creator><creator>Lee, Jong-Ho</creator><creator>Park, Byung-Gook</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20160601</creationdate><title>Analysis on temperature dependent current mechanism of tunnel field-effect transistors</title><author>Lee, Junil ; Kwon, Dae Woong ; Kim, Hyun Woo ; Kim, Jang Hyun ; Park, Euyhwan ; Park, Taehyung ; Kim, Sihyun ; Lee, Ryoongbin ; Lee, Jong-Ho ; Park, Byung-Gook</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c408t-80dd539d993abd85f259c680b23520ca3dffb239d0e5dd1cdc600ee3ca9a1fbe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Channels</topic><topic>Decomposition</topic><topic>Degradation</topic><topic>Field effect transistors</topic><topic>Semiconductor devices</topic><topic>Silicon</topic><topic>Silicon germanides</topic><topic>Tunnels (transportation)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Junil</creatorcontrib><creatorcontrib>Kwon, Dae Woong</creatorcontrib><creatorcontrib>Kim, Hyun Woo</creatorcontrib><creatorcontrib>Kim, Jang Hyun</creatorcontrib><creatorcontrib>Park, Euyhwan</creatorcontrib><creatorcontrib>Park, Taehyung</creatorcontrib><creatorcontrib>Kim, Sihyun</creatorcontrib><creatorcontrib>Lee, Ryoongbin</creatorcontrib><creatorcontrib>Lee, Jong-Ho</creatorcontrib><creatorcontrib>Park, Byung-Gook</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Junil</au><au>Kwon, Dae Woong</au><au>Kim, Hyun Woo</au><au>Kim, Jang Hyun</au><au>Park, Euyhwan</au><au>Park, Taehyung</au><au>Kim, Sihyun</au><au>Lee, Ryoongbin</au><au>Lee, Jong-Ho</au><au>Park, Byung-Gook</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis on temperature dependent current mechanism of tunnel field-effect transistors</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2016-06-01</date><risdate>2016</risdate><volume>55</volume><issue>6S1</issue><spage>6</spage><epage>06GG03</epage><pages>6-06GG03</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>In this paper, the total drain current (ID) of a tunnel FET (TFET) is decomposed into each current component with different origins to analyze the ID formation mechanisms of the TFET as a function of gate voltage (VGS). Transfer characteristics are firstly extracted with fabricated Silicon channel TFETs (Si TFETs) and silicon germanium channel TFETs (SiGe TFETs) at various temperatures. The subthreshold swings (SS) of both Si TFETs and SiGe TFETs get degraded and the SSs of SiGe TFETs get degraded more as temperature becomes higher. Then, all the IDs measured at various temperatures are decomposed into each current component through technology computer aided design (TCAD) simulations with a good agreement with experimental data. As a result, it is revealed that Shockley-Read-Hall (SRH) recombination mainly contribute to the ID of a TFET before band to band tunneling (BTBT) occurs. Furthermore, the SS degradation by high temperature is explained successfully by the SRH recombination with electric field dependence.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.55.06GG03</doi><tpages>4</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Channels Decomposition Degradation Field effect transistors Semiconductor devices Silicon Silicon germanides Tunnels (transportation) |
| title | Analysis on temperature dependent current mechanism of tunnel field-effect transistors |
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