Improving source/drain contact resistance of amorphous indium-gallium-zinc-oxide thin-film transistors using an n super(+)-ZnO buffer layer
To avoid high temperature annealing in improving the source/drain (S/D) resistance (R sub(DS)) of amorphous indium-gallium-zinc-oxide ([alpha]-IGZO) thin-film transistors (TFTs) for flexible electronics, a simple and efficient technique using a sputtering-deposited n super(+)-ZnO buffer layer (BL) s...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2016-06, Vol.55 (6), p.06GG05-06GG05 |
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| container_issue | 6 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 55 |
| creator | Hung, Chien-Hsiung Wang, Shui-Jinn Lin, Chieh Wu, Chien-Hung Chen, Yen-Han Liu, Pang-Yi Tu, Yung-Chun Lin, Tseng-Hsing |
| description | To avoid high temperature annealing in improving the source/drain (S/D) resistance (R sub(DS)) of amorphous indium-gallium-zinc-oxide ([alpha]-IGZO) thin-film transistors (TFTs) for flexible electronics, a simple and efficient technique using a sputtering-deposited n super(+)-ZnO buffer layer (BL) sandwiched between the S/D electrode and the [alpha]-IGZO channel is proposed and demonstrated. It shows that the R sub(DS) of [alpha]-IGZO TFTs with the proposed n super(+)-ZnO BL is reduced to 8.1 x 10 super(3)[Omega] as compared with 6.1 x 10 super(4)[Omega] of the conventional one. The facilitation of carrier tunneling between the S/D electrode and the [alpha]-IGZO channel through the use of the n super(+)-ZnO BL to lower the effective barrier height therein is responsible for the R sub(DS) reduction. Effects of the chamber pressure on the carrier concentration of the sputtering-deposited n super(+)-ZnO BL and the thickness of the BL on the degree of improvement in the performance of [alpha]-IGZO TFTs are analyzed and discussed. |
| doi_str_mv | 10.7567/JJAP.55.06GG05 |
| format | Article |
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It shows that the R sub(DS) of [alpha]-IGZO TFTs with the proposed n super(+)-ZnO BL is reduced to 8.1 x 10 super(3)[Omega] as compared with 6.1 x 10 super(4)[Omega] of the conventional one. The facilitation of carrier tunneling between the S/D electrode and the [alpha]-IGZO channel through the use of the n super(+)-ZnO BL to lower the effective barrier height therein is responsible for the R sub(DS) reduction. 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It shows that the R sub(DS) of [alpha]-IGZO TFTs with the proposed n super(+)-ZnO BL is reduced to 8.1 x 10 super(3)[Omega] as compared with 6.1 x 10 super(4)[Omega] of the conventional one. The facilitation of carrier tunneling between the S/D electrode and the [alpha]-IGZO channel through the use of the n super(+)-ZnO BL to lower the effective barrier height therein is responsible for the R sub(DS) reduction. 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| source | Institute of Physics Journals |
| subjects | Buffer layers Chambers Channels Drains Electrodes Electronics Semiconductor devices Thin film transistors |
| title | Improving source/drain contact resistance of amorphous indium-gallium-zinc-oxide thin-film transistors using an n super(+)-ZnO buffer layer |
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